Infineon HEXFET Type N-Channel MOSFET, 265 A, 40 V PQFN IRFH7084TRPBF
- RS Stock No.:
- 257-5804
- Mfr. Part No.:
- IRFH7084TRPBF
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 5 units)*
HK$38.80
FREE delivery for orders over HK$250.00
Stock information currently inaccessible
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | HK$7.76 | HK$38.80 |
| 50 - 95 | HK$7.38 | HK$36.90 |
| 100 - 495 | HK$7.16 | HK$35.80 |
| 500 - 1995 | HK$6.94 | HK$34.70 |
| 2000 + | HK$6.74 | HK$33.70 |
*price indicative
- RS Stock No.:
- 257-5804
- Mfr. Part No.:
- IRFH7084TRPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 265A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | HEXFET | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 1.25mΩ | |
| Maximum Power Dissipation Pd | 156W | |
| Typical Gate Charge Qg @ Vgs | 127nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 5 mm | |
| Length | 6mm | |
| Standards/Approvals | RoHS | |
| Height | 1.05mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 265A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series HEXFET | ||
Package Type PQFN | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 1.25mΩ | ||
Maximum Power Dissipation Pd 156W | ||
Typical Gate Charge Qg @ Vgs 127nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Width 5 mm | ||
Length 6mm | ||
Standards/Approvals RoHS | ||
Height 1.05mm | ||
Automotive Standard No | ||
The Infineon strongIRFET power MOSFET family is optimized for low RDS and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Industry standard surface-mount power package
Product qualification according to JEDEC standard
Silicon optimized for applications switching below <100 kHz
Softer body-diode compared to previous silicon generation
Wide portfolio available
Related links
- Infineon HEXFET Type N-Channel MOSFET 40 V PQFN
- Infineon HEXFET Type N-Channel MOSFET 40 V PQFN
- Infineon HEXFET Type N-Channel MOSFET 40 V PQFN
- Infineon HEXFET Type N-Channel MOSFET 40 V PQFN
- Infineon HEXFET Type N-Channel MOSFET 30 V PQFN
- Infineon HEXFET Type N-Channel MOSFET 20 V PQFN
- Infineon HEXFET Type N-Channel MOSFET 40 V PQFN IRFH7440TRPBF
- Infineon HEXFET Type N-Channel MOSFET 40 V PQFN IRFH7446TRPBF