Vishay Type N-Channel MOSFET, 5.3 A, 500 V IPAK
- RS Stock No.:
- 256-7416
- Mfr. Part No.:
- SIHU5N50D-GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 tube of 75 units)*
HK$516.075
FREE delivery for orders over HK$250.00
Last RS stock
- Final 3,000 unit(s), ready to ship from another location
Units | Per unit | Per Tube* |
|---|---|---|
| 75 - 75 | HK$6.881 | HK$516.08 |
| 150 - 450 | HK$6.537 | HK$490.28 |
| 525 - 975 | HK$6.145 | HK$460.88 |
| 1050 - 5925 | HK$5.716 | HK$428.70 |
| 6000 + | HK$5.257 | HK$394.28 |
*price indicative
- RS Stock No.:
- 256-7416
- Mfr. Part No.:
- SIHU5N50D-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 5.3A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | IPAK | |
| Mount Type | Through Hole | |
| Maximum Drain Source Resistance Rds | 0.033Ω | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 5.3A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type IPAK | ||
Mount Type Through Hole | ||
Maximum Drain Source Resistance Rds 0.033Ω | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay Semiconductor N-channel 500 V 5.3A (Tc) 104W (Tc) through hole TO-251AA and its applications are consumer electronicsdisplays, server and telecom power supplies, SMPS and in Industrial are welding, induction heating, motor drives and battery chargers.
Low area specific on-resistance
Reduced capacitive switching losses
High body diode ruggedness
Optimal efficiency and operation
Simple gate drive circuitry
Fast switching
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