Vishay Type N-Channel MOSFET, 24 A, 650 V TO-263 SIHB24N65E-GE3

The image is for reference only, please refer to product details and specifications

Bulk discount available

Subtotal (1 unit)*

HK$46.90

Add to Basket
Select or type quantity
In Stock
  • 979 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
1 - 9HK$46.90
10 - 24HK$42.20
25 - 99HK$40.00
100 - 499HK$35.20
500 +HK$30.40

*price indicative

Packaging Options:
RS Stock No.:
256-7413
Mfr. Part No.:
SIHB24N65E-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

24A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-263

Mount Type

Surface

Maximum Drain Source Resistance Rds

0.033Ω

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

The Vishay Semiconductor E series power mosfet have low figure of merit (FOM) Ron x Qg and low input capacitance (Ciss).

Reduced switching and conduction losses

Ultra low gate charge (Qg)

Avalanche energy rated (UIS)

Related links