Vishay E Type N-Channel MOSFET, 15 A, 600 V TO-263 SIHB15N60E-GE3
- RS Stock No.:
- 256-7411
- Mfr. Part No.:
- SIHB15N60E-GE3
- Manufacturer:
- Vishay
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HK$62.30
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- Plus 986 unit(s) shipping from 15 June 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | HK$31.15 | HK$62.30 |
| 10 - 18 | HK$28.00 | HK$56.00 |
| 20 - 98 | HK$27.55 | HK$55.10 |
| 100 - 498 | HK$26.55 | HK$53.10 |
| 500 + | HK$22.90 | HK$45.80 |
*price indicative
- RS Stock No.:
- 256-7411
- Mfr. Part No.:
- SIHB15N60E-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 15A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-263 | |
| Series | E | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 0.033Ω | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 15A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-263 | ||
Series E | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 0.033Ω | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 600V Drain Source Voltage, 15A Continuous Drain Current - SIHB15N60E-GE3
This power MOSFET is a high-voltage N-channel transistor designed for switching and power-conversion tasks in industrial electronics. It operates across a wide temperature range and is supplied in a Compact surface-mount package suitable for thermal management in board-level power assemblies.
Features and Benefits:
• 600V drain rating enables high-voltage switching applications • 15A continuous current supports medium-power loads • 0.28 Ω on-resistance reduces conduction losses • 78 nC typical gate charge allows predictable switching behaviour • 180W power dissipation supports elevated load handling • 150 °C maximum operating temperature endures high thermal stress
Applications
• Suitable for high-voltage power supplies and converters • Ideal for motor-drive switching in automation systems • Used for industrial lighting and ballast-control circuits • Can be used for energy management and inverter stages • Used with heat-sinked boards in power-distribution modules
What gate voltage limits should be observed during design?
The device must not be subjected to gate-source voltages exceeding 30V to avoid gate-oxide stress.
How should thermal conditions be managed on a PCB?
Design a dedicated copper pad and heat-spreading area for the TO-263 package to maintain junction temperatures below rated limits under specified power dissipation.
What environmental temperature range can components be expected to tolerate?
It is specified to operate down to -55 °C and up to +150 °C, making it suitable for harsh ambient conditions and elevated junction scenarios.
Is this device matched to automotive specification levels?
It is not classified as an automotive-grade component and should be evaluated accordingly for vehicle applications.
Related links
- Vishay Type N-Channel MOSFET 600 V TO-263
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- Vishay Type N-Channel MOSFET 40 V TO-263 SQM120N04-1M7L_GE3
- Vishay Type N-Channel MOSFET 60 V TO-263 SQM120N06-3M5L_GE3
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