Vishay SI8824EDB Type N-Channel MOSFET, 2.1 A, 20 V, 4-Pin MICRO FOOT SI8824EDB-T2-E1
- RS Stock No.:
- 256-7399
- Mfr. Part No.:
- SI8824EDB-T2-E1
- Manufacturer:
- Vishay
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HK$64.20
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Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | HK$2.568 | HK$64.20 |
| 50 - 75 | HK$2.44 | HK$61.00 |
| 100 - 225 | HK$2.296 | HK$57.40 |
| 250 - 975 | HK$2.132 | HK$53.30 |
| 1000 + | HK$1.964 | HK$49.10 |
*price indicative
- RS Stock No.:
- 256-7399
- Mfr. Part No.:
- SI8824EDB-T2-E1
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.1A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | MICRO FOOT | |
| Series | SI8824EDB | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.175Ω | |
| Typical Gate Charge Qg @ Vgs | 2.7nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 5V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 0.9W | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Height | 0.402mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.1A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type MICRO FOOT | ||
Series SI8824EDB | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.175Ω | ||
Typical Gate Charge Qg @ Vgs 2.7nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 5V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 0.9W | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Height 0.402mm | ||
Automotive Standard No | ||
Vishay SI8824EDB Series MOSFET, 20V Maximum Drain Source Voltage, 2.1A Maximum Continuous Drain Current - SI8824EDB-T2-E1
This MOSFET is a Compact N-channel transistor designed for surface-mount applications in electronic control and switching circuits. It serves as a low-voltage switch or amplifier in systems where modest current handling and low on-resistance are required, operating across a wide ambient temperature range and suited to industrial environments that demand small-footprint power components.
Features and Benefits:
• 20V drain voltage enables low-voltage switching applications • 2.1A continuous drain current supports moderate load currents • 0.175Ω Rds(on) reduces conduction losses under load • 2.7nC typical gate charge allows Faster switching transitions • 0.9W power dissipation manages thermal load in Compact layouts • +150°C maximum rating permits high-temperature operation
Applications
• Suitable for motor driver gate stages in automation equipment • Ideal for load switching in industrial control panels • Used for power management in embedded electronic assemblies • Can be used for signal-level switching in test instrumentation
What package type is provided for soldering on to a PCB?
It is supplied in a MICRO FOOT 4-pin surface-mount package intended for automated assembly and dense board layouts.
How does the device behave thermally under continuous operation?
With a 0.9W dissipation limit and a +150°C maximum junction rating, thermal design should include PCB copper and heat-sinking to maintain junction temperature within safe limits at rated current.
What gate drive limits should be observed to avoid damage?
The maximum gate-to-source voltage is 5V, so gate drivers must stay within this range to prevent gate oxide stress.
What environmental specification governs hazardous-substance handling?
The device conforms to RoHS standards restricting certain hazardous substances in manufacture and disposal.
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