Vishay SI3483DDV Type P-Channel MOSFET, -6.4 A, -30 V, 6-Pin TSOP-6
- RS Stock No.:
- 256-7358
- Mfr. Part No.:
- SI3483DDV-T1-GE3
- Manufacturer:
- Vishay
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HK$5,346.00
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Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | HK$1.782 | HK$5,346.00 |
| 6000 - 6000 | HK$1.746 | HK$5,238.00 |
| 9000 + | HK$1.694 | HK$5,082.00 |
*price indicative
- RS Stock No.:
- 256-7358
- Mfr. Part No.:
- SI3483DDV-T1-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -6.4A | |
| Maximum Drain Source Voltage Vds | -30V | |
| Package Type | TSOP-6 | |
| Series | SI3483DDV | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 0.0513Ω | |
| Maximum Power Dissipation Pd | 3W | |
| Typical Gate Charge Qg @ Vgs | 4.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 16V | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | +150°C | |
| Height | 1.1mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -6.4A | ||
Maximum Drain Source Voltage Vds -30V | ||
Package Type TSOP-6 | ||
Series SI3483DDV | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 0.0513Ω | ||
Maximum Power Dissipation Pd 3W | ||
Typical Gate Charge Qg @ Vgs 4.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 16V | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature +150°C | ||
Height 1.1mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay SI3483DDV Series MOSFET, -30V Maximum Drain Source Voltage, 0.0513Ω Maximum Drain Source Resistance - SI3483DDV-T1-GE3
This p-channel MOSFET is a surface-mount semiconductor device designed to control high-side switching and analogue power functions in Compact electronic systems. It operates with a 30V drain-to-source rating and is intended for use across a broad ambient temperature range, making it suitable for demanding industrial and automation environments where Compact power switching is required.
Features and Benefits:
• Low Rds(on) 0.0513Ω enabling reduced conduction losses • Continuous drain current 6.4A supporting moderate power loads • Typical gate charge 4.5nC permitting Faster gate switching • Maximum power dissipation 3W allowing sustained thermal load • Gate-source withstand 16V for tolerant gate-drive margins • Operable between -55°C and +150°C for high-temperature use
Applications
• Suitable for high-side load switching in automation equipment • Ideal for battery management circuits in portable systems • Used for analogue power control in industrial electronics • Can be used for thermally sensitive needing Compact SMD parts • Used with motor-control drivers requiring P-channel topology
What package type is used for Compact PCB layouts?
It is supplied in a TSOP-6 surface-mount package with six pins for tight board real estate.
How does the device behave under high junction temperatures?
It is rated to operate up to +150°C, allowing continued conduction and switching at elevated temperatures within specified limits.
What is the typical switching load characteristic to consider in drive design?
Typical gate charge is 4.5nC, which informs gate-drive energy and switching-loss calculations.
Which environmental approvals or material standards apply?
The component conforms to RoHS material restrictions for restricted-substance compliance.
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