Vishay IRFR9014 Type P-Channel Power MOSFET, -5.1 A, -60 V, 3-Pin TO-252 IRFR9014PBF
- RS Stock No.:
- 256-7313
- Mfr. Part No.:
- IRFR9014PBF
- Manufacturer:
- Vishay
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | HK$7.89 | HK$78.90 |
| 20 - 40 | HK$7.71 | HK$77.10 |
| 50 - 90 | HK$7.58 | HK$75.80 |
| 100 - 490 | HK$6.15 | HK$61.50 |
| 500 + | HK$5.09 | HK$50.90 |
*price indicative
- RS Stock No.:
- 256-7313
- Mfr. Part No.:
- IRFR9014PBF
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | -5.1A | |
| Maximum Drain Source Voltage Vds | -60V | |
| Series | IRFR9014 | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.5Ω | |
| Forward Voltage Vf | -5.5V | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 25W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Height | 2.38mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id -5.1A | ||
Maximum Drain Source Voltage Vds -60V | ||
Series IRFR9014 | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.5Ω | ||
Forward Voltage Vf -5.5V | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 25W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Height 2.38mm | ||
Automotive Standard No | ||
Vishay IRFR9014 Series Power MOSFET, -60V Maximum Drain Source Voltage, 5.1A Maximum Continuous Drain Current - IRFR9014PBF
This power MOSFET is a P‑channel transistor designed for switching and power management in surface‑mounted electronics. It operates across a wide temperature range and suits compact assemblies where controlled gate drive and moderate current handling are required. The device is supplied in a TO‑252 package and conforms to RoHS directives.
Features and Benefits:
• 60V drain voltage supports medium‑voltage switching applications
• -5.1A continuous drain current enables moderate load handling
• 0.5Ω Rds(on) reduces conduction losses in low‑duty circuits
• 12nC typical gate charge allows faster gate switching
• 25W maximum power dissipation manages thermal loading in compact layouts
• ±20V gate tolerance provides flexibility in gate‑drive arrangements
• -5.1A continuous drain current enables moderate load handling
• 0.5Ω Rds(on) reduces conduction losses in low‑duty circuits
• 12nC typical gate charge allows faster gate switching
• 25W maximum power dissipation manages thermal loading in compact layouts
• ±20V gate tolerance provides flexibility in gate‑drive arrangements
Applications
• Suitable for reverse‑polarity protection in DC systems
• Ideal for small motor control and drive circuits
• Used with power distribution modules on compact assemblies
• Can be used for load switching in consumer electronics
• Appropriate for biasing and polarity switching in sensor arrays
• Ideal for small motor control and drive circuits
• Used with power distribution modules on compact assemblies
• Can be used for load switching in consumer electronics
• Appropriate for biasing and polarity switching in sensor arrays
What mounting method is required for reliable installation?
It is intended for surface mounting onto printed circuit boards using the three‑pin TO‑252 footprint with appropriate soldering profiles for thermal transfer.
How does it perform in elevated ambient temperatures?
The component is rated to operate up to +150°C junction, allowing use in high‑temperature environments with suitable thermal management.
What gate‑drive limits must be observed to avoid damage?
The gate‑to‑source voltage must not exceed ±20V under any operating condition to prevent gate oxide overstress.
Is this device specified for automotive‑standard qualification?
It is not designated as meeting automotive‑specific standards and should not be assumed to replace automotive‑graded components.
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