DiodesZetex N-Channel MOSFET, 26 A, 100 V Enhancement, 8-Pin PowerDI3333-8 DMTH10H032LFVWQ-7
- RS Stock No.:
- 254-8656
- Mfr. Part No.:
- DMTH10H032LFVWQ-7
- Manufacturer:
- DiodesZetex
The image is for reference only, please refer to product details and specifications
Get a bulk buy discount
Add 50 more to save 3%
View bulk pricing optionsSubtotal (1 pack of 10 units)*
HK$58.60
FREE delivery for orders over HK$250.00
Last RS stock
- Final 240 unit(s), ready to ship from another location
Units | Per unit | Per Pack* | Saving |
|---|---|---|---|
| 10 - 40 | HK$5.86 | HK$58.60 | - |
| 50 - 90 | HK$5.63 | HK$56.30 | 3% |
| 100 - 240 | HK$5.40 | HK$54.00 | 7% |
| 250 - 990 | HK$5.25 | HK$52.50 | 10% |
| 1000 + | HK$5.09 | HK$50.90 | 13% |
*price indicative
- RS Stock No.:
- 254-8656
- Mfr. Part No.:
- DMTH10H032LFVWQ-7
- Manufacturer:
- DiodesZetex
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 26A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PowerDI3333-8 | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 41mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.73W | |
| Maximum Gate Source Voltage Vgs | 8V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Length | 3.3mm | |
| Height | 800μm | |
| Width | 3.3mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 26A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PowerDI3333-8 | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 41mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.73W | ||
Maximum Gate Source Voltage Vgs 8V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Length 3.3mm | ||
Height 800μm | ||
Width 3.3mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The DiodeZetex enhancement mode MOSFET has been designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP, and is ideal for use in backlighting, dc to dc converters and power management functi
Low on resistance
Wet table flank for improved optical inspection
Low switching losses
Halogen and antimony free
Related links
- DiodesZetex Type N-Channel MOSFET 100 V Enhancement, 8-Pin PowerDI3333-8
- DiodesZetex Type N-Channel MOSFET 100 V Enhancement, 8-Pin PowerDI3333-8 DMTH10H032LFVWQ-13
- DiodesZetex Type N-Channel MOSFET 40 V Enhancement, 8-Pin PowerDI3333-8
- DiodesZetex Type N-Channel MOSFET 12 V Enhancement, 8-Pin PowerDI3333-8
- DiodesZetex Type N-Channel MOSFET 60 V Enhancement, 8-Pin PowerDI3333-8
- DiodesZetex Type N-Channel MOSFET 40 V Enhancement, 8-Pin PowerDI3333-8 DMTH43M8LFGQ-7
- DiodesZetex Type N-Channel MOSFET 12 V Enhancement, 8-Pin PowerDI3333-8 DMTH10H032LFVW-7
- DiodesZetex Type N-Channel MOSFET 60 V Enhancement, 8-Pin PowerDI3333-8 DMTH6016LFVWQ-7-A