Specifications

Product overview and Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	DiodesZetex
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	10.7A
	Maximum Drain Source Voltage Vds	12V
	Package Type	TSOT-26
	Pin Count	6
	Maximum Drain Source Resistance Rds	41mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	20nC
	Maximum Power Dissipation Pd	1.73W
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	8 V
	Maximum Operating Temperature	175°C
	Length	3mm
	Standards/Approvals	No
	Automotive Standard	AEC-Q101

	Select all
	Brand DiodesZetex
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 10.7A
	Maximum Drain Source Voltage Vds 12V
	Package Type TSOT-26
	Pin Count 6
	Maximum Drain Source Resistance Rds 41mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 20nC
	Maximum Power Dissipation Pd 1.73W
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 8 V
	Maximum Operating Temperature 175°C
	Length 3mm
	Standards/Approvals No
	Automotive Standard AEC-Q101

Datasheet - DMN4060SVTQ-7

The DiodeZetex enhancement mode MOSFET has been designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP, and is ideal for use in backlighting, dc to dc converters and power management functi

Low on resistance

Low input capacitance

Fast switching speed

Halogen and antimony Free

DiodesZetex Type N-Channel MOSFET, 10.7 A, 12 V Enhancement, 6-Pin TSOT-26 DMN4060SVTQ-7

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