onsemi NTB N-Channel MOSFET, 58 A, 1.2 kV Enhancement, 7-Pin TO-263 NTBG022N120M3S
- RS Stock No.:
- 254-7661
- Mfr. Part No.:
- NTBG022N120M3S
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Get a bulk buy discount
Add 10 more to save 7%
View bulk pricing optionsSubtotal (1 unit)*
HK$153.80
FREE delivery for orders over HK$250.00
In Stock
- 783 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Saving |
|---|---|---|
| 1 - 9 | HK$153.80 | - |
| 10 - 99 | HK$141.80 | 7% |
| 100 - 249 | HK$135.40 | 11% |
| 250 - 499 | HK$132.70 | 13% |
| 500 + | HK$130.10 | 15% |
*price indicative
- RS Stock No.:
- 254-7661
- Mfr. Part No.:
- NTBG022N120M3S
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 58A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Package Type | TO-263 | |
| Series | NTB | |
| Mount Type | Through Hole | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 117W | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 148nC | |
| Forward Voltage Vf | 4.5V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 58A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Package Type TO-263 | ||
Series NTB | ||
Mount Type Through Hole | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 117W | ||
Maximum Gate Source Voltage Vgs 22V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 148nC | ||
Forward Voltage Vf 4.5V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Silicon Carbide (SiC) MOSFET - EliteSiC, 22 mohm, 1200 V, M3S, D2PAK-7L
The ON Semiconductor NTB series of planar sic mosfets is optimized for fast switching applications with a planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive.
100% avalanche tested
Improved power density
Gate drive voltage 15V to 18V
Related links
- onsemi NTB Type N-Channel MOSFET 1200 V Enhancement, 7-Pin TO-263
- onsemi NTB Type N-Channel MOSFET 1200 V Enhancement, 7-Pin TO-263 NTBG060N065SC1
- onsemi NTB Type N-Channel MOSFET 1200 V Enhancement, 7-Pin HPSOF-8L
- onsemi NTB Type N-Channel MOSFET 1200 V Enhancement, 7-Pin HPSOF-8L NTBL045N065SC1
- onsemi NTB Type N-Channel MOSFET 1200 V Enhancement, 7-Pin TO-263
- onsemi NTB Type N-Channel MOSFET & Diode 1200 V Enhancement, 7-Pin TO-263
- onsemi NTB Type N-Channel MOSFET 1200 V Enhancement, 7-Pin TO-263
- onsemi NTB Type N-Channel MOSFET 1200 V Enhancement, 7-Pin TO-263 NTBG040N120SC1