Nexperia N-Channel MOSFET, 0.41 A, 50 V Enhancement, 4-Pin LFPAK88 PSMNR90-50SLHAX
- RS Stock No.:
- 251-7923
- Mfr. Part No.:
- PSMNR90-50SLHAX
- Manufacturer:
- Nexperia
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 2 units)*
HK$93.40
FREE delivery for orders over HK$250.00
Last RS stock
- Final 1,982 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 48 | HK$46.70 | HK$93.40 |
| 50 - 98 | HK$44.40 | HK$88.80 |
| 100 - 248 | HK$41.65 | HK$83.30 |
| 250 - 998 | HK$38.85 | HK$77.70 |
| 1000 + | HK$37.70 | HK$75.40 |
*price indicative
- RS Stock No.:
- 251-7923
- Mfr. Part No.:
- PSMNR90-50SLHAX
- Manufacturer:
- Nexperia
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 0.41A | |
| Maximum Drain Source Voltage Vds | 50V | |
| Package Type | LFPAK88 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.9mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 375W | |
| Typical Gate Charge Qg @ Vgs | 112nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Length | 8.1mm | |
| Height | 8.1mm | |
| Standards/Approvals | No | |
| Width | 1.7mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 0.41A | ||
Maximum Drain Source Voltage Vds 50V | ||
Package Type LFPAK88 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.9mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 375W | ||
Typical Gate Charge Qg @ Vgs 112nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Length 8.1mm | ||
Height 8.1mm | ||
Standards/Approvals No | ||
Width 1.7mm | ||
Automotive Standard AEC-Q101 | ||
The Nexperia 410 Amp continuous current, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK88 package. Part of the ASFETs for Battery Isolation and DC Motor control family and using Nexperia’s unique “SchottkyPlus” technology delivers high efficiency and low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current.
Copper-clip and solder die attach for low package inductance and resistance, and high ID(max) rating
Qualified to 175 °C
Avalanche rated, 100 % tested
Low QG, QGD and QOSS for high efficiency, especially at higher switching frequencies
Superfast switching with soft body-diode recovery for low-spiking and ringing, recommended for low EMI designs
Narrow VGS(th) rating for easy paralleling and improved current sharing
Very strong linear-mode / safe operating area characteristics for safe and reliable switching at high-current conditions
Related links
- Nexperia Type N-Channel MOSFET 50 V Enhancement, 4-Pin LFPAK88
- Nexperia Type N-Channel MOSFET 30 V, 4-Pin LFPAK88
- Nexperia Type N-Channel MOSFET 30 V, 4-Pin LFPAK88 PSMNR55-40SSHJ
- Nexperia Type N-Channel MOSFET 30 V, 4-Pin LFPAK88 BUK7S2R0-40HJ
- Nexperia Type N-Channel MOSFET 30 V, 4-Pin LFPAK88 BUK7S0R5-40HJ
- Nexperia Type N-Channel MOSFET 12 V Enhancement, 4-Pin DFN
- Nexperia Type N-Channel MOSFET 60 V Enhancement, 4-Pin LFPAK
- Nexperia Type N-Channel MOSFET 60 V Enhancement, 4-Pin LFPAK