Infineon Dual N BSD840N 2 Type N-Channel OptiMOSTM2 Small-Signal-Transistors, 880 mA, 20 V Dual N, 6-Pin SOT-363
- RS Stock No.:
- 250-0525
- Mfr. Part No.:
- BSD840NH6327XTSA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Subtotal (1 reel of 3000 units)*
HK$2,109.00
FREE delivery for orders over HK$250.00
- 9,000 unit(s) shipping from 18 February 2027
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | HK$0.703 | HK$2,109.00 |
| 6000 - 6000 | HK$0.633 | HK$1,899.00 |
| 9000 + | HK$0.62 | HK$1,860.00 |
*price indicative
- RS Stock No.:
- 250-0525
- Mfr. Part No.:
- BSD840NH6327XTSA1
- Manufacturer:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | OptiMOSTM2 Small-Signal-Transistors | |
| Maximum Continuous Drain Current Id | 880mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-363 | |
| Series | BSD840N | |
| Mount Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 400mΩ | |
| Channel Mode | Dual N | |
| Maximum Power Dissipation Pd | 400mW | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 0.26nC | |
| Maximum Gate Source Voltage Vgs | 750mV | |
| Forward Voltage Vf | 1.1V | |
| Transistor Configuration | Dual N | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | IEC61249-2-21, RoHS | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type OptiMOSTM2 Small-Signal-Transistors | ||
Maximum Continuous Drain Current Id 880mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-363 | ||
Series BSD840N | ||
Mount Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 400mΩ | ||
Channel Mode Dual N | ||
Maximum Power Dissipation Pd 400mW | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 0.26nC | ||
Maximum Gate Source Voltage Vgs 750mV | ||
Forward Voltage Vf 1.1V | ||
Transistor Configuration Dual N | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals IEC61249-2-21, RoHS | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Infineon BSD840N Series OptiMOSTM2 Small-Signal-Transistors, 20V Drain-Source Voltage, 0.88A Continuous Drain Current - BSD840NH6327XTSA1
Features and Benefits:
• 0.75V maximum gate threshold enables low-voltage drive compatibility
• 0.26nC gate charge minimises switching energy and drive requirements
• 0.88A continuous current supports modest load currents reliably
• 150°C maximum temperature rating allows high-temperature operation
Applications
• Ideal for low-voltage gate-drive power management circuits
• Used with Compact board layouts requiring SOT-363 packaging
• Can be used for sensor Interface switching in harsh environments
• Used for dual MOSFET arrangements in control modules
What package type does it use for Compact designs?
Which automotive standard does it meet for qualification?
What temperature range can the device operate within?
How many transistors are available per chip and how are they configured?
Which material and environmental standard applies to its construction?
Related links
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