Infineon BSD Type P-Channel MOSFET, 390 mA, -20 V Enhancement, 6-Pin SOT-363 BSD223PH6327XTSA1
- RS Stock No.:
- 250-0521
- Mfr. Part No.:
- BSD223PH6327XTSA1
- Manufacturer:
- Infineon
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | HK$2.26 | HK$22.60 |
| 20 - 90 | HK$2.04 | HK$20.40 |
| 100 - 240 | HK$1.83 | HK$18.30 |
| 250 - 490 | HK$1.65 | HK$16.50 |
| 500 + | HK$1.49 | HK$14.90 |
*price indicative
- RS Stock No.:
- 250-0521
- Mfr. Part No.:
- BSD223PH6327XTSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 390mA | |
| Maximum Drain Source Voltage Vds | -20V | |
| Package Type | SOT-363 | |
| Series | BSD | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 1.20Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 12V | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 0.25W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 390mA | ||
Maximum Drain Source Voltage Vds -20V | ||
Package Type SOT-363 | ||
Series BSD | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 1.20Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 12V | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 0.25W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Infineon BSD Series MOSFET -20V Drain‑Source Voltage, 0.25W Power Dissipation - BSD223PH6327XTSA1
This p‑channel MOSFET is a surface‑mount transistor designed for low‑power switching across a wide temperature range. It functions as an enhancement‑mode device for controlling current in Compact assemblies and is suitable for environments requiring extended thermal tolerance and automotive‑grade qualification.
Features and Benefits:
• 1.20Ω drain‑source resistance provides predictable conduction behaviour
• 0.39A continuous drain current supports low‑current switching loads
• 12V gate‑source rating allows standard gate‑drive voltages
• -20V drain‑source limit enables operation in negative‑voltage circuits
• 0.25W power dissipation minimises thermal loading in small assemblies
• 0.39A continuous drain current supports low‑current switching loads
• 12V gate‑source rating allows standard gate‑drive voltages
• -20V drain‑source limit enables operation in negative‑voltage circuits
• 0.25W power dissipation minimises thermal loading in small assemblies
Applications
• Suitable for battery management and low‑current power‑routing tasks
• Ideal for signal switching in Compact surface‑mount electronics
• Used with automotive sensor interfaces requiring temperature endurance
• Can be used for level‑shifting in mixed‑voltage control circuits
• Ideal for signal switching in Compact surface‑mount electronics
• Used with automotive sensor interfaces requiring temperature endurance
• Can be used for level‑shifting in mixed‑voltage control circuits
What temperature extremes can it handle?
It operates across an ambient range from -55°C to +150°C.
Which package and mounting style does it use?
It is supplied in a SOT‑363 package with a surface‑mount footprint and six pins.
Is it compliant with industry environmental standards?
It meets RoHS requirements and is qualified to AEC‑Q101 for automotive use.
What channel type and mode does it employ?
It is a P‑channel device operating in enhancement mode.
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