Infineon IPD Type N-Channel MOSFET, 80 A, 75 V Enhancement, 3-Pin TO-252 IPD90N03S4L03ATMA1

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2 - 8HK$6.00HK$12.00
10 - 98HK$5.85HK$11.70
100 - 248HK$5.65HK$11.30
250 - 498HK$5.50HK$11.00
500 +HK$5.35HK$10.70

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Packaging Options:
RS Stock No.:
249-6911
Mfr. Part No.:
IPD90N03S4L03ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

75V

Package Type

TO-252

Series

IPD

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.7mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

81W

Typical Gate Charge Qg @ Vgs

80nC

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon OptiMOS is power MOSFET for automotive applications. Operating channel is N. It is AEC Q101 qualified. MSL1 up to 260°C peak reflow. Green Product (RoHS compliant) and it is 100% Avalanche tested.

175°C operating temperature

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