Infineon IAUZ N-Channel MOSFET, 30 A, 60 V Enhancement, 8-Pin PQFN IAUZ30N06S5L140ATMA1
- RS Stock No.:
- 249-6897
- Mfr. Part No.:
- IAUZ30N06S5L140ATMA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Subtotal (1 reel of 5000 units)*
HK$12,635.00
FREE delivery for orders over HK$250.00
- Shipping from 28 May 2027
Units | Per unit | Per Reel* |
|---|---|---|
| 5000 - 5000 | HK$2.527 | HK$12,635.00 |
| 10000 - 10000 | HK$2.476 | HK$12,380.00 |
| 15000 + | HK$2.402 | HK$12,010.00 |
*price indicative
- RS Stock No.:
- 249-6897
- Mfr. Part No.:
- IAUZ30N06S5L140ATMA1
- Manufacturer:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | IAUZ | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 14mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series IAUZ | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 14mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Infineon IAUZ Series MOSFET, 60V Maximum Drain‑Source Voltage, 30A Maximum Continuous Drain Current - IAUZ30N06S5L140ATMA1
Features and Benefits:
• 81W power dissipation supports sustained high‑power operation
• 80nC typical gate charge enables controlled switching with moderate drive energy
• 20V gate tolerance allows use with higher‑voltage gate‑drive circuits
• PQFN package improves the thermal path for surface‑mounted assemblies
Applications
• Ideal for high‑current DC-DC converters in vehicles
• Used with motor‑drive stages in automotive electronics
• Can be used for switch‑mode power supplies requiring Compact mounting
• Suitable for high‑temperature control electronics in harsh environments
What temperature range can it sustain in operation?
How does the package support thermal management?
What gate‑drive considerations apply for switching?
Which mounting method is intended for installation?
Related links
- Infineon IAUZ Type N-Channel MOSFET 60 V Enhancement, 8-Pin PQFN IAUZ30N06S5L140ATMA1
- Infineon IAUZ Type N-Channel MOSFET 60 V Enhancement, 8-Pin PQFN
- Infineon IAUZ Type N-Channel MOSFET 60 V Enhancement, 8-Pin PQFN IAUZ40N06S5N050ATMA1
- Infineon IAUZ Type N-Channel MOSFET 40 V Enhancement, 8-Pin SuperSO8 5 x 6
- Infineon IAUZ Type N-Channel MOSFET 1200 V Enhancement, 8-Pin AG-EASY2B
- Infineon IAUZ Type N-Channel MOSFET 1200 V Enhancement, 8-Pin AG-EASY2B F3L8MR12W2M1HPB11BPSA1
- Infineon IAUZ Type N-Channel MOSFET 40 V Enhancement, 8-Pin SuperSO8 5 x 6 IAUZ20N08S5L300ATMA1
- Infineon IAUZ Type N-Channel MOSFET 40 V Enhancement, 8-Pin SuperSO8 5 x 6 IAUZ30N10S5L240ATMA1
