Infineon N-Channel MOSFET, 54 A, 650 V, 7-Pin D2PAK IMBG65R039M1HXTMA1

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1 - 9HK$85.70
10 - 99HK$83.10
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500 +HK$75.90

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Packaging Options:
RS Stock No.:
248-9315
Mfr. Part No.:
IMBG65R039M1HXTMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

54 A

Maximum Drain Source Voltage

650 V

Package Type

TO-263-7

Mounting Type

Surface Mount

Pin Count

7

Number of Elements per Chip

1

The Infineon SiC MOSFET is a 650 V CoolSiC is built over the solid silicon carbide technology, leveraging the wide bandgap SiC material characteristics, the 650 V CoolSiC MOSFET offers a unique combination of performance, reliability and ease of use, suitable for high temperature and harsh operations, it enables the simplified and cost effective deployment of the highest system efficiency.

Optimized switching behaviour at higher currents
Commutation robust fast body diode with low Qf
Superior gate oxide reliability
Tj,max-175°C and excellent thermal behaviour
Lower RDS(on) and pulse current dependency on temperature
Increased avalanche capability
Compatible with standard drivers
Kelvin source provides upto 4 times lower switching losses

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


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