DiodesZetex 2 Type N-Channel MOSFET, 30 V Enhancement, 6-Pin UDFN-2020 DMN3055LFDBQ-7
- RS Stock No.:
- 246-7517
- Mfr. Part No.:
- DMN3055LFDBQ-7
- Manufacturer:
- DiodesZetex
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 25 units)*
HK$66.60
FREE delivery for orders over HK$250.00
In Stock
- 3,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | HK$2.664 | HK$66.60 |
| 50 - 75 | HK$2.604 | HK$65.10 |
| 100 - 225 | HK$2.536 | HK$63.40 |
| 250 - 975 | HK$2.48 | HK$62.00 |
| 1000 + | HK$2.416 | HK$60.40 |
*price indicative
- RS Stock No.:
- 246-7517
- Mfr. Part No.:
- DMN3055LFDBQ-7
- Manufacturer:
- DiodesZetex
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | UDFN-2020 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 0.075Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Typical Gate Charge Qg @ Vgs | 11.2nC | |
| Maximum Power Dissipation Pd | 0.81W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type UDFN-2020 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 0.075Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Typical Gate Charge Qg @ Vgs 11.2nC | ||
Maximum Power Dissipation Pd 0.81W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The DiodesZetex makes an N-channel enhancement mode MOSFET, designed to meet the stringent requirements of automotive applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in U-DFN2020-6 packaging. It offers fast switching and high efficiency.
Maximum drain to source voltage is 30 V and maximum gate to source voltage is ±12 V It offers a low input/output leakage It offers low input capacitance
Related links
- DiodesZetex 2 Type N-Channel MOSFET 6-Pin UDFN-2020
- DiodesZetex Dual 2 Type N-Channel MOSFET 6-Pin UDFN-2020
- DiodesZetex Dual 2 Type N-Channel MOSFET 6-Pin UDFN-2020 DMT3020UFDB-7
- DiodesZetex 2 Type N-Channel MOSFET 6-Pin UDFN-2020
- DiodesZetex 2 Type N-Channel MOSFET 6-Pin UDFN-2020
- DiodesZetex 2 Type P 4.6 A 6-Pin UDFN-2020
- DiodesZetex 2 Type N-Channel MOSFET 6-Pin UDFN-2020 DMN10H6D2LFDB-7
- DiodesZetex 2 Type N-Channel MOSFET 6-Pin UDFN-2020 DMN2053UFDB-7