Infineon BSZ N-Channel MOSFET, 212 A, 40 V N, 8-Pin SuperSO8 5 x 6 BSZ065N06LS5ATMA1
- RS Stock No.:
- 244-1568
- Mfr. Part No.:
- BSZ065N06LS5ATMA1
- Manufacturer:
- Infineon
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HK$70.70
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In Stock
- 970 unit(s) ready to ship from another location
- Plus 5,000 unit(s) shipping from 17 June 2027
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | HK$14.14 | HK$70.70 |
| 10 - 95 | HK$13.82 | HK$69.10 |
| 100 - 245 | HK$13.46 | HK$67.30 |
| 250 - 495 | HK$13.14 | HK$65.70 |
| 500 + | HK$12.84 | HK$64.20 |
*price indicative
- RS Stock No.:
- 244-1568
- Mfr. Part No.:
- BSZ065N06LS5ATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 212A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SuperSO8 5 x 6 | |
| Series | BSZ | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.7mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 212A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SuperSO8 5 x 6 | ||
Series BSZ | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.7mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Infineon BSZ Series MOSFET, 40V Maximum Drain Source Voltage, 212A Maximum Continuous Drain Current - BSZ065N06LS5ATMA1
This MOSFET is a high-current N-channel switching device designed for surface-mount power management in demanding electronic systems. It operates across a wide temperature range and is intended for applications requiring substantial continuous drain current and efficient conduction with low forward voltage.
Features and Benefits:
• 212A continuous drain current delivers sustained high-current capability
• 0.7mΩ Rds(on) minimises conduction losses for improved efficiency
• 81W maximum power dissipation supports elevated thermal loads
• 1.2V forward voltage reduces voltage drop under load
• 80nC typical gate charge enables fast switching performance
• 20V maximum gate-source rating protects gate from overvoltage
• 0.7mΩ Rds(on) minimises conduction losses for improved efficiency
• 81W maximum power dissipation supports elevated thermal loads
• 1.2V forward voltage reduces voltage drop under load
• 80nC typical gate charge enables fast switching performance
• 20V maximum gate-source rating protects gate from overvoltage
Applications
• Suitable for high-current DC-DC converters in power stages
• Ideal for motor drive half-bridge and H-bridge designs
• Used for battery protection and power distribution modules
• Can be used for synchronous rectification in power supplies
• Applicable to high-power switching in industrial control units
• Ideal for motor drive half-bridge and H-bridge designs
• Used for battery protection and power distribution modules
• Can be used for synchronous rectification in power supplies
• Applicable to high-power switching in industrial control units
What thermal range can this device tolerate in operation?
It functions from −55°C up to +150°C enabling use in harsh temperature environments.
How is the component packaged for PCB assembly?
It comes in an 8-pin SuperSO8 5x6 surface-mount package for Compact board mounting.
What gate-drive considerations are needed for switching?
Drive circuitry must provide adequate charge for the typical 80nC gate charge to achieve the intended switching speed and respect the 20V maximum Vgs limit.
What type of channel conduction does it provide?
It is an N-channel device designed for enhanced current flow in low-side or high-side switching topologies.
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