Infineon IAUC Type N-Channel MOSFET, 24 A, 100 V Enhancement, 8-Pin SuperSO8 5 x 6 IAUC24N10S5L300ATMA1
- RS Stock No.:
- 243-9338
- Mfr. Part No.:
- IAUC24N10S5L300ATMA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 5 units)*
HK$35.60
FREE delivery for orders over HK$250.00
In Stock
- Plus 2,415 unit(s) shipping from 26 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | HK$7.12 | HK$35.60 |
| 10 - 95 | HK$6.94 | HK$34.70 |
| 100 - 245 | HK$6.80 | HK$34.00 |
| 250 - 495 | HK$6.62 | HK$33.10 |
| 500 + | HK$6.46 | HK$32.30 |
*price indicative
- RS Stock No.:
- 243-9338
- Mfr. Part No.:
- IAUC24N10S5L300ATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 24A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | IAUC | |
| Package Type | SuperSO8 5 x 6 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.4mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 81W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 24A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series IAUC | ||
Package Type SuperSO8 5 x 6 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.4mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 81W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon has MOSFET which is OptiMOS power MOSFET for automotive applications, N-channel-Enhancement mode-Logic Level and AEC Q101 qualified.
N Channel
100% Avalanche tested
AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green Product (RoHS compliant)
Related links
- Infineon IAUC Type N-Channel MOSFET 100 V Enhancement, 8-Pin SuperSO8 5 x 6
- Infineon IAUC Type N-Channel MOSFET 40 V Enhancement, 8-Pin SuperSO8 5 x 6
- Infineon IAUC Type N-Channel MOSFET 20 V Enhancement, 8-Pin SuperSO8 5 x 6
- Infineon IAUC Type N-Channel MOSFET 40 V Enhancement, 8-Pin SuperSO8 5 x 6
- Infineon IAUC Type N-Channel MOSFET 20 V Enhancement, 8-Pin SuperSO8 5 x 6
- Infineon IAUC Type N-Channel MOSFET 40 V Enhancement, 8-Pin SuperSO8 5 x 6
- Infineon IAUC Type N-Channel MOSFET 40 V Enhancement, 8-Pin SuperSO8 5 x 6 IAUC100N04S6L014ATMA1
- Infineon IAUC Type N-Channel MOSFET 40 V Enhancement, 8-Pin SuperSO8 5 x 6 IAUC100N04S6L020ATMA1