Infineon IAUC N-Channel MOSFET, 80 A, 20 V Enhancement, 8-Pin SuperSO8 5 x 6 IAUC80N04S6N036ATMA1

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HK$57.40

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5 - 5HK$11.48HK$57.40
10 - 95HK$11.20HK$56.00
100 - 245HK$10.92HK$54.60
250 - 495HK$10.68HK$53.40
500 +HK$10.40HK$52.00

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Packaging Options:
RS Stock No.:
243-9317
Mfr. Part No.:
IAUC80N04S6N036ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

20V

Series

IAUC

Package Type

SuperSO8 5 x 6

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.4mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

81W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.1V

Maximum Gate Source Voltage Vgs

20V

Typical Gate Charge Qg @ Vgs

80nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

Infineon IAUC Series MOSFET, 20V Maximum Drain Source Voltage, 80A Maximum Continuous Drain Current - IAUC80N04S6N036ATMA1


This MOSFET is a power-switching transistor designed for high-current, surface-mount applications in harsh environments. It operates as an N-channel enhancement device and is suited to thermal and electrical duty where elevated temperatures and robust current handling are required. The component is RoHS approved and built to automotive qualification standards for use in demanding vehicle electronics.

Features and Benefits:


• Maximum continuous drain current 80 A enables high-current delivery
• Very low RDS(on) 1.4 mΩ reduces conduction losses
• Maximum power dissipation 81 W supports heavy switching loads
• Gate charge Qg 80 nC allows predictable drive requirements
• Maximum VDS 20 V permits low-voltage system integration

Applications


• Suitable for DC-DC converter stages in automotive systems
• Used with power-management modules in electrified vehicles
• Ideal for motor-drive MOSFET stages in auxiliary systems
• Can be used for battery protection and power distribution

What gate-drive considerations are necessary for efficient switching?


Expect a typical total gate charge of 80 nC, so gate drivers must source and sink adequate current to achieve desired switching speeds while managing switching losses.

How does thermal range affect deployment in vehicle electronics?


The device supports operation from -55°C to 175°C, enabling placement near heat-generating components and within engine-bay ambient conditions.

What mounting and package constraints apply to circuit layout?


It is supplied in a SuperSO8 5x6 surface-mount package with eight pins, requiring a PCB footprint and thermal management consistent with that package type.

Which voltage and polarity limitations should designers observe?


The device has a maximum gate-to-source voltage of 20 V and a maximum drain-to-source voltage of 20 V, so system voltages must remain within those limits.

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