Infineon IAUC N-Channel MOSFET, 80 A, 20 V Enhancement, 8-Pin SuperSO8 5 x 6 IAUC80N04S6N036ATMA1
- RS Stock No.:
- 243-9317
- Mfr. Part No.:
- IAUC80N04S6N036ATMA1
- Manufacturer:
- Infineon
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Subtotal (5 units, in packs of 5)*
HK$57.40
FREE delivery for orders over HK$250.00
- 5,000 unit(s) ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | HK$11.48 | HK$57.40 |
| 10 - 95 | HK$11.20 | HK$56.00 |
| 100 - 245 | HK$10.92 | HK$54.60 |
| 250 - 495 | HK$10.68 | HK$53.40 |
| 500 + | HK$10.40 | HK$52.00 |
*price indicative
- RS Stock No.:
- 243-9317
- Mfr. Part No.:
- IAUC80N04S6N036ATMA1
- Manufacturer:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | IAUC | |
| Package Type | SuperSO8 5 x 6 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.4mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 81W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series IAUC | ||
Package Type SuperSO8 5 x 6 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.4mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 81W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Infineon IAUC Series MOSFET, 20V Maximum Drain Source Voltage, 80A Maximum Continuous Drain Current - IAUC80N04S6N036ATMA1
Features and Benefits:
• Very low RDS(on) 1.4 mΩ reduces conduction losses
• Maximum power dissipation 81 W supports heavy switching loads
• Gate charge Qg 80 nC allows predictable drive requirements
• Maximum VDS 20 V permits low-voltage system integration
Applications
• Used with power-management modules in electrified vehicles
• Ideal for motor-drive MOSFET stages in auxiliary systems
• Can be used for battery protection and power distribution
What gate-drive considerations are necessary for efficient switching?
How does thermal range affect deployment in vehicle electronics?
What mounting and package constraints apply to circuit layout?
Which voltage and polarity limitations should designers observe?
Related links
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- Infineon IAUC Type N-Channel MOSFET 20 V Enhancement, 8-Pin SuperSO8 5 x 6
- Infineon IAUC Type N-Channel MOSFET 40 V Enhancement, 8-Pin SuperSO8 5 x 6
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