Infineon BSC N-Channel MOSFET, 381 A, 40 V N, 8-Pin SuperSO8 5 x 6
- RS Stock No.:
- 243-9308
- Mfr. Part No.:
- BSC0906NSATMA1
- Manufacturer:
- Infineon
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HK$18,520.00
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Units | Per unit | Per Reel* |
|---|---|---|
| 5000 - 5000 | HK$3.704 | HK$18,520.00 |
| 10000 - 10000 | HK$3.63 | HK$18,150.00 |
| 15000 + | HK$3.558 | HK$17,790.00 |
*price indicative
- RS Stock No.:
- 243-9308
- Mfr. Part No.:
- BSC0906NSATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 381A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | BSC | |
| Package Type | SuperSO8 5 x 6 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.7mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 81W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 381A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series BSC | ||
Package Type SuperSO8 5 x 6 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.7mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 81W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Infineon BSC Series MOSFET, 40V Maximum Drain Source Voltage, 381A Maximum Continuous Drain Current - BSC0906NSATMA1
This MOSFET is a surface-mount N-channel transistor designed to switch and control high currents in power electronic circuits. It operates across a broad temperature range and is intended for applications requiring substantial continuous drain current and elevated power handling in a Compact package.
Features and Benefits:
• 381 A continuous drain current enabling high-current switching
• 81 W power dissipation for sustained thermal load handling
• 0.7 mΩ RDS(on) minimising conduction losses during operation
• 40 V drain-source rating supporting medium-voltage systems
• 80 nC gate charge facilitating predictable switching control
• 81 W power dissipation for sustained thermal load handling
• 0.7 mΩ RDS(on) minimising conduction losses during operation
• 40 V drain-source rating supporting medium-voltage systems
• 80 nC gate charge facilitating predictable switching control
Applications
• Suitable for high-current DC-DC converter stages
• Used for synchronous rectification in power modules
• Ideal for motor drive output stages requiring large currents
• Can be used for server power distribution and VRM designs
• Useful in Compact surface-mount power assemblies
• Used for synchronous rectification in power modules
• Ideal for motor drive output stages requiring large currents
• Can be used for server power distribution and VRM designs
• Useful in Compact surface-mount power assemblies
What gate voltage range can be applied safely?
Gate drive must not exceed 20 V between gate and source to avoid damaging the gate oxide.
What ambient temperature extremes can it tolerate in operation?
It is specified to operate from −55 °C up to +150 °C, allowing use in wide-temperature environments.
How does the package affect mounting and the thermal path?
The device is supplied in a SuperSO8 package sized 5 x 6 mm for surface mounting, offering a short conduction path to PCB thermal planes.
What is the forward voltage relevant to conduction scenarios?
The forward voltage is 1 V, relevant when assessing voltage drop in rectification or low-side conduction contexts.
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