Infineon IRFH Type N-Channel MOSFET, 11 A, 40 V, 8-Pin PQFN IRL100HS121

RS Stock No.:: 243-9301
Mfr. Part No.:: IRL100HS121
Manufacturer:: Infineon

Infineon IRFH Type N-Channel MOSFET, 11 A, 40 V, 8-Pin PQFN IRL100HS121

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Bulk discount available

Subtotal (1 pack of 5 units)*

HK$39.10

FREE delivery for orders over HK$250.00

In Stock

Plus 7,940 unit(s) shipping from 26 January 2026

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Units	Per unit	Per Pack*
5 - 5	HK$7.82	HK$39.10
10 - 95	HK$7.64	HK$38.20
100 - 245	HK$7.44	HK$37.20
250 - 495	HK$7.26	HK$36.30
500 +	HK$7.10	HK$35.50

*price indicative

RS Stock No.:: 243-9301
Mfr. Part No.:: IRL100HS121
Manufacturer:: Infineon

Specifications

Product overview and Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	11A
	Maximum Drain Source Voltage Vds	40V
	Package Type	PQFN
	Series	IRFH
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.7mΩ
	Forward Voltage Vf	1V
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	80nC
	Maximum Power Dissipation Pd	81W
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 11A
	Maximum Drain Source Voltage Vds 40V
	Package Type PQFN
	Series IRFH
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.7mΩ
	Forward Voltage Vf 1V
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 80nC
	Maximum Power Dissipation Pd 81W
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - IRL100HS121

The Infineon IRL100HS121 N-Channel Power MOSFET available in three different voltage classes (60V, 80V and 100V), Infineon’s new logic level power MOSFETs are highly suitable for wireless charging, telecom and adapter applications. The PQFN 2x2 package is especially suited for high speed switching and form factor critical applications. It enables higher power density and improved efficiency as well as significant space saving.

Lowest FOM (R DS(on) x Q g/gd)

Optimized Q g, C oss, and Q rr for fast switching

Logic level compatibility

Tiny PQFN 2x2mm package

Higher power density designs

Higher switching frequency

Uses OptiMOSTM5 Chip

Reduced parts count wherever 5V supplies are available

Driven directly from microcontrollers (slow switching)

System cost reductions

Infineon IRFH Type N-Channel MOSFET, 11 A, 40 V, 8-Pin PQFN IRL100HS121

FREE delivery for orders over HK$250.00

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