Infineon iPB Type P-Channel MOSFET, 273 A, 100 V N, 3-Pin TO-263
- RS Stock No.:
- 243-9267
- Mfr. Part No.:
- IPB110P06LMATMA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 reel of 1000 units)*
HK$18,678.00
FREE delivery for orders over HK$250.00
Temporarily out of stock
- Shipping from 26 November 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 1000 - 1000 | HK$18.678 | HK$18,678.00 |
| 2000 - 2000 | HK$18.229 | HK$18,229.00 |
| 3000 + | HK$17.792 | HK$17,792.00 |
*price indicative
- RS Stock No.:
- 243-9267
- Mfr. Part No.:
- IPB110P06LMATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 273A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | iPB | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.7mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 81W | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 273A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series iPB | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.7mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 81W | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Infineon iPB Series MOSFET, 100V Maximum Drain Source Voltage, 273A Maximum Continuous Drain Current - IPB110P06LMATMA1
This MOSFET is a P‑channel semiconductor switch designed for high-current and high-voltage applications, supplied in a surface-mount TO-263 package. It operates across a wide temperature span and is suitable for power conversion and switching tasks where thermal tolerance and Compact mounting are required.
Features and Benefits:
• Very low on-resistance enables reduced conduction losses
• High continuous drain current supports heavy load handling
• 100V drain-source rating allows higher-voltage deployment
• 81W power dissipation provides robust thermal capacity
• 80nC typical gate charge permits responsive switching
• RoHS conformity minimises hazardous substance content
• High continuous drain current supports heavy load handling
• 100V drain-source rating allows higher-voltage deployment
• 81W power dissipation provides robust thermal capacity
• 80nC typical gate charge permits responsive switching
• RoHS conformity minimises hazardous substance content
Applications
• Suitable for synchronous rectification in power supplies
• Useful in motor-drive downstream stages requiring high current
• Can be used for high-voltage DC-DC converter switches
• Ideal for Compact surface-mount power modules
• Used for fast switching in transient load environments
• Useful in motor-drive downstream stages requiring high current
• Can be used for high-voltage DC-DC converter switches
• Ideal for Compact surface-mount power modules
• Used for fast switching in transient load environments
What gate voltage limits must be observed during use?
Gate-source voltage must not exceed ±20V to avoid damaging the gate structure.
How does temperature range affect deployment options?
The device functions from -55°C to 175°C, allowing use in both cold-start and elevated-temperature conditions.
What mounting considerations apply for thermal performance?
Employ appropriate PCB thermal pads and heat-sinking with the TO-263 footprint to manage the 81W dissipation.
How does channel type influence circuit polarity?
As a P‑channel device, it requires appropriate polarity arrangements for high-side switching configurations.
What switching behaviour is indicated by its forward voltage?
A forward voltage of 1.1V reflects its conduction characteristic under specified drive and load conditions.
Related links
- Infineon iPB Type P-Channel MOSFET 100 V N, 3-Pin TO-263 IPB110P06LMATMA1
- Infineon iPB Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-263
- Infineon iPB Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-263 IPB80P03P4L04ATMA2
- Infineon iPB Type N-Channel MOSFET 100 V N, 3-Pin TO-263
- Infineon iPB Type N-Channel MOSFET 100 V N, 3-Pin TO-263 IPB110N20N3LFATMA1
- Infineon iPB Type N-Channel MOSFET 100 V N, 3-Pin TO-263 IPB048N15N5LFATMA1
- Infineon iPB Type N-Channel MOSFET 100 V N, 3-Pin TO-263 IPB60R045P7ATMA1
- Infineon iPB Type N-Channel MOSFET 100 V N, 3-Pin TO-263 IPB048N15N5ATMA1