Infineon BSC N-Channel MOSFET, 381 A, 40 V N, 8-Pin TDSON
- RS Stock No.:
- 241-9969
- Mfr. Part No.:
- BSC034N10LS5ATMA1
- Manufacturer:
- Infineon
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Units | Per unit | Per Reel* |
|---|---|---|
| 5000 - 5000 | HK$14.016 | HK$70,080.00 |
| 10000 - 10000 | HK$13.736 | HK$68,680.00 |
| 15000 + | HK$13.323 | HK$66,615.00 |
*price indicative
- RS Stock No.:
- 241-9969
- Mfr. Part No.:
- BSC034N10LS5ATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 381A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | BSC | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.7mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 381A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series BSC | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.7mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Infineon BSC Series MOSFET, 40V Maximum Drain Source Voltage, 381A Maximum Continuous Drain Current - BSC034N10LS5ATMA1
This MOSFET is a high-current N-channel device designed for power switching and conversion in surface-mount applications. It operates across an extended temperature range and is suitable for environments requiring robust thermal tolerance and low conduction losses. The component is presented in a TDSON package for board-mounted power stages and complies with RoHS.
Features and Benefits:
• 40V rating for intermediate-voltage power stages
• 381A continuous drain current for high-current delivery
• 0.7mΩ Rds(on) to reduce conduction losses
• 81W power dissipation for sustained thermal performance
• 80nC typical gate charge for predictable switching control
• Gate-source withstand up to 20V for flexible drive margins
• 381A continuous drain current for high-current delivery
• 0.7mΩ Rds(on) to reduce conduction losses
• 81W power dissipation for sustained thermal performance
• 80nC typical gate charge for predictable switching control
• Gate-source withstand up to 20V for flexible drive margins
Applications
• Suitable for high-current DC-DC converters in power supplies
• Ideal for synchronous rectification in switching regulators
• Used with motor drivers requiring low conduction loss
• Can be used for server power distribution modules
• Appropriate for industrial power management assemblies
• Ideal for synchronous rectification in switching regulators
• Used with motor drivers requiring low conduction loss
• Can be used for server power distribution modules
• Appropriate for industrial power management assemblies
What ambient temperatures can it withstand in operation?
It operates from -55°C up to +150°C, allowing use in wide-temperature environments.
How does the device help reduce heat in dense power systems?
The low drain-source resistance minimises I2R losses, lowering heat generation during conduction.
What mounting method is required for board assembly?
It is intended for surface mounting in a TDSON package to facilitate Compact power layouts.
How much forward voltage drop is typical under conduction?
The forward voltage is specified at 1.1V for conditions where Vgs and Id produce forward conduction.
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