Infineon IAUC N-Channel MOSFET, 120 A, 40 V Enhancement, 8-Pin TDSON IAUC90N10S5N062ATMA1
- RS Stock No.:
- 241-9892
- Mfr. Part No.:
- IAUC90N10S5N062ATMA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 2 units)*
HK$39.20
FREE delivery for orders over HK$250.00
In Stock
- 2,852 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | HK$19.60 | HK$39.20 |
| 10 - 98 | HK$19.00 | HK$38.00 |
| 100 - 248 | HK$18.50 | HK$37.00 |
| 250 - 498 | HK$18.00 | HK$36.00 |
| 500 + | HK$17.45 | HK$34.90 |
*price indicative
- RS Stock No.:
- 241-9892
- Mfr. Part No.:
- IAUC90N10S5N062ATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TDSON | |
| Series | IAUC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.7mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 81W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TDSON | ||
Series IAUC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.7mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 81W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Infineon IAUC Series MOSFET, 81W Maximum Power Dissipation, 120A Maximum Continuous Drain Current - IAUC90N10S5N062ATMA1
This MOSFET is a power switching transistor designed for high-current, high-temperature environments, providing controlled conduction in enhancement-mode N-channel configurations. It is intended for surface-mount applications where robust thermal and electrical performance are required, and it complies with environmental restriction standards.
Features and Benefits:
• 40V drain rating enabling mid-voltage power switching
• 120A continuous drain current for high-current loads
• 0.7mΩ low on-resistance reducing conduction losses
• 81W power dissipation supporting elevated power handling
• 80nC typical gate charge allowing predictable switching energy
• 20V gate tolerance offering wide gate-drive flexibility
• 120A continuous drain current for high-current loads
• 0.7mΩ low on-resistance reducing conduction losses
• 81W power dissipation supporting elevated power handling
• 80nC typical gate charge allowing predictable switching energy
• 20V gate tolerance offering wide gate-drive flexibility
Applications
• Suitable for automotive power management modules
• Ideal for high-current motor drive stages
• Used for DC-DC conversion in industrial systems
• Can be used for battery protection and distribution
• Suitable for Compact surface-mount power assemblies
• Ideal for high-current motor drive stages
• Used for DC-DC conversion in industrial systems
• Can be used for battery protection and distribution
• Suitable for Compact surface-mount power assemblies
What thermal range can it operate over?
It is specified to operate from -55°C up to 175°C to accommodate wide thermal envelopes.
What package and mounting style does it use?
It is supplied in a TDSON package designed for surface mounting to control board real estate and thermal paths.
Is it suitable for automotive design requirements?
It meets AEC‑Q101 qualification and is RoHS-compliant for automotive-grade applications.
What channel and conduction mode does it employ?
It is an N-channel device operating in enhancement mode for controlled switching behaviour.
Related links
- Infineon IAUC Type N-Channel MOSFET 40 V Enhancement, 8-Pin TDSON
- Infineon IAUC Type N-Channel MOSFET 60 V Enhancement, 8-Pin TDSON
- Infineon IAUC Type N-Channel MOSFET 40 V Enhancement, 8-Pin TDSON IAUC120N04S6L012ATMA1
- Infineon IAUC Type N-Channel MOSFET 60 V Enhancement, 8-Pin TDSON IAUC120N06S5L032ATMA1
- Infineon IAUC Type N-Channel MOSFET 60 V Enhancement, 8-Pin TDSON IAUC120N06S5N017ATMA1
- Infineon IAUC Type N-Channel MOSFET 40 V Enhancement, 8-Pin TDSON IAUC120N04S6N013ATMA1
- Infineon IAUC Type N-Channel MOSFET 40 V Enhancement, 8-Pin TDSON IAUC120N04S6N010ATMA1
- Infineon IAUC Type N-Channel MOSFET 40 V Enhancement, 8-Pin TDSON IAUC120N04S6L009ATMA1