Infineon BSC0 N-Channel MOSFET, 381 A, 40 V N, 8-Pin SuperSO8 5 x 6 BSC022N04LS6ATMA1
- RS Stock No.:
- 241-9690
- Mfr. Part No.:
- BSC022N04LS6ATMA1
- Manufacturer:
- Infineon
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HK$32.80
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | HK$16.40 | HK$32.80 |
| 10 - 98 | HK$16.05 | HK$32.10 |
| 100 - 248 | HK$15.65 | HK$31.30 |
| 250 - 498 | HK$15.30 | HK$30.60 |
| 500 + | HK$14.95 | HK$29.90 |
*price indicative
- RS Stock No.:
- 241-9690
- Mfr. Part No.:
- BSC022N04LS6ATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 381A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SuperSO8 5 x 6 | |
| Series | BSC0 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.7mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 81W | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 381A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SuperSO8 5 x 6 | ||
Series BSC0 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.7mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 81W | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Infineon BSC0 Series MOSFET, 81W Maximum Power Dissipation, 40V Maximum Drain Source Voltage - BSC022N04LS6ATMA1
This MOSFET is a high-current N-channel transistor designed for surface-mount power conversion and switching duties in demanding thermal environments. It operates across a broad temperature range and is suited to applications requiring low conduction losses and substantial continuous drain current while mounted in a Compact SuperSO8 package.
Features and Benefits:
• 40V drain voltage supports medium-voltage system designs
• 381A continuous drain current enables high-current switching
• 0.7mΩ on-resistance minimises conduction losses
• 81W power dissipation allows substantial thermal loading
• 80nC typical gate charge suits fast switching at high current
• 20V gate rating provides wide gate-drive headroom
• 381A continuous drain current enables high-current switching
• 0.7mΩ on-resistance minimises conduction losses
• 81W power dissipation allows substantial thermal loading
• 80nC typical gate charge suits fast switching at high current
• 20V gate rating provides wide gate-drive headroom
Applications
• Suitable for high-current power supplies and converters
• Ideal for motor drive stages requiring low-loss switching
• Used with synchronous rectification in DC-DC converters
• Can be used for load-switching in server power rails
• Suitable for thermally stressed installations down to -55°C
• Ideal for motor drive stages requiring low-loss switching
• Used with synchronous rectification in DC-DC converters
• Can be used for load-switching in server power rails
• Suitable for thermally stressed installations down to -55°C
What thermal extremes can it tolerate during operation?
It is rated to function from -55°C up to 175°C, enabling use in elevated-temperature environments.
Which mounting method is required for PCB implementation?
It is supplied in a SuperSO8 5x6 surface-mount package for automated PCB assembly.
How does the forward voltage affect low-voltage designs?
The typical forward voltage of 1V limits voltage drop during conduction, aiding efficiency in low-voltage, high-current systems.
Is the device suitable for automotive qualification processes?
It is not designated as an automotive-standard device and should be evaluated accordingly for vehicle applications.
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