Microchip MSC750SMA170B N-Channel MOSFET, 5 A, 1.7 kV TO-247 MSC750SMA170B
- RS Stock No.:
- 241-9278
- Distrelec Article No.:
- 304-24-072
- Mfr. Part No.:
- MSC750SMA170B
- Manufacturer:
- Microchip
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|---|---|---|---|
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- RS Stock No.:
- 241-9278
- Distrelec Article No.:
- 304-24-072
- Mfr. Part No.:
- MSC750SMA170B
- Manufacturer:
- Microchip
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 5A | |
| Maximum Drain Source Voltage Vds | 1.7kV | |
| Package Type | TO-247 | |
| Series | MSC750SMA170B | |
| Mount Type | Through Hole | |
| Maximum Drain Source Resistance Rds | 8Ω | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 2V | |
| Typical Gate Charge Qg @ Vgs | 11nC | |
| Maximum Power Dissipation Pd | 1.6W | |
| Forward Voltage Vf | 1.8V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 5A | ||
Maximum Drain Source Voltage Vds 1.7kV | ||
Package Type TO-247 | ||
Series MSC750SMA170B | ||
Mount Type Through Hole | ||
Maximum Drain Source Resistance Rds 8Ω | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 2V | ||
Typical Gate Charge Qg @ Vgs 11nC | ||
Maximum Power Dissipation Pd 1.6W | ||
Forward Voltage Vf 1.8V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Microchip silicon carbide power MOSFET product line from Micro semi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high voltage applications.
Low capacitances and low gate charge
Fast switching speed due to low internal gate resistance
Stable operation at high junction temperature TJ(max) equal to 175 °C
Fast and reliable body diode
Superior avalanche ruggedness
RoHS compliant
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