Infineon ISK N-Channel MOSFET, 55 A, 25 V, 6-Pin PQFN ISK024NE2LM5
- RS Stock No.:
- 240-6376
- Mfr. Part No.:
- ISK024NE2LM5
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Get a bulk buy discount
Add 6000 more to save HK$414.00
View bulk pricing optionsSubtotal (1 reel of 3000 units)*
HK$10,326.00
FREE delivery for orders over HK$250.00
In Stock
- 12,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* | Saving |
|---|---|---|---|
| 3000 - 3000 | HK$3.442 | HK$10,326.00 | - |
| 6000 - 6000 | HK$3.373 | HK$10,119.00 | HK$414.00 |
| 9000 + | HK$3.305 | HK$9,915.00 | HK$1,233.00 |
*price indicative
- RS Stock No.:
- 240-6376
- Mfr. Part No.:
- ISK024NE2LM5
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Package Type | PQFN | |
| Series | ISK | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 2.4mΩ | |
| Maximum Power Dissipation Pd | 171W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 810mV | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 25V | ||
Package Type PQFN | ||
Series ISK | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 2.4mΩ | ||
Maximum Power Dissipation Pd 171W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 810mV | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS™ 5 power MOSFET 25 V, 2.4 mΩ, smallest form factor in PQFN 2x2 package. With the new BIC OptiMOS™ 5 in 25V and 30V product family Infineon offers a best-in-class solution for efficiency in a small form factor, making it the perfect solution for applications such as wireless charging, load switches and low power DCDC applications. The small 4 mm2 footprint PQFN 2x2 package, combined with outstanding electrical performance contributes towards form factor improvement in end applications, featuring low RDSon of 2.4 mΩ.
Superior thermal resistance for a PQFN 2x2 package
Optimized for highest performance and power density
Industry’s lowest RDSon in smallest PQFN 2x2 package
N-channel
100% Avalanche tested
Pb-free lead plating; RoHS compliant
Related links
- Infineon ISK Type N-Channel MOSFET 25 V, 6-Pin PQFN ISK024NE2LM5
- Infineon ISK Type N-Channel MOSFET 25 V, 6-Pin PQFN
- Infineon ISK Type N-Channel MOSFET 25 V, 6-Pin PQFN ISK036N03LM5
- Infineon HEXFET Type N-Channel MOSFET 25 V, 6-Pin PQFN
- Infineon HEXFET Type N-Channel MOSFET 25 V, 6-Pin PQFN IRFHS8242TRPBF
- Infineon HEXFET Type N-Channel MOSFET -30 V, 6-Pin PQFN
- Infineon HEXFET Type N-Channel MOSFET 80 V, 6-Pin PQFN
- Infineon HEXFET Type N-Channel MOSFET 80 V, 6-Pin PQFN IRL80HS120