Nexperia Type N-Channel MOSFET, 10.3 A, 25 V Enhancement, 8-Pin MLPAK33 PXN6R2-25QLJ

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Subtotal (1 pack of 25 units)*

HK$63.60

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Units
Per unit
Per Pack*
25 - 25HK$2.544HK$63.60
50 - 75HK$2.496HK$62.40
100 - 225HK$2.452HK$61.30
250 - 975HK$2.408HK$60.20
1000 +HK$2.368HK$59.20

*price indicative

Packaging Options:
RS Stock No.:
240-1992
Mfr. Part No.:
PXN6R2-25QLJ
Manufacturer:
Nexperia
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Brand

Nexperia

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

10.3A

Maximum Drain Source Voltage Vds

25V

Package Type

MLPAK33

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

13.6mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

12.5W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Nexperia N-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Logic-level compatible

Trench MOSFET technology

Ultra low QG and QGD for high system efficiency, especially at higher switching frequencies

Superfast switching with soft-recovery

Low spiking and ringing for low EMI designs

MLPAK33 package (3.3 x 3.3 mm footprint)

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