Vishay Type N-Channel MOSFET, 63.7 A, 60 V Depletion, 8-Pin PowerPAK SO-8 SiR516DP-T1-RE3

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Subtotal (1 pack of 5 units)*

HK$81.80

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Per unit
Per Pack*
5 - 45HK$16.36HK$81.80
50 - 95HK$16.08HK$80.40
100 - 245HK$15.76HK$78.80
250 - 995HK$15.50HK$77.50
1000 +HK$15.22HK$76.10

*price indicative

Packaging Options:
RS Stock No.:
239-8651
Mfr. Part No.:
SiR516DP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

63.7A

Maximum Drain Source Voltage Vds

60V

Package Type

PowerPAK SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.01Ω

Channel Mode

Depletion

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

83W

Typical Gate Charge Qg @ Vgs

56nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

125°C

Width

5.15 mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Vishay TrenchFET® is Gen IV power N-Channel MOSFET which operates at 100 V. This MOSFET used for power supply, motor drive control and synchronous rectification.

Very low resistance

UIS tested

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