Vishay Type N-Channel MOSFET, 218 A, 100 V Depletion, 8-Pin PowerPAK SO-8DC

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HK$46,974.00

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3000 - 12000HK$15.658HK$46,974.00
15000 +HK$15.345HK$46,035.00

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RS Stock No.:
239-8616
Mfr. Part No.:
SiDR626LEP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

218A

Maximum Drain Source Voltage Vds

100V

Package Type

PowerPAK SO-8DC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0021Ω

Channel Mode

Depletion

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

120W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

46.1nC

Maximum Operating Temperature

125°C

Length

6.15mm

Width

5.15 mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Vishay TrenchFET® is Gen IV power N-Channel MOSFET which operates at 60 V and 175 °C temperature. This MOSFET used for solar micro inverter, motor drive switch and synchronous rectification.

Top side cooling feature provides additional venue for thermal transfer

Very low resistance

UIS tested

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