Infineon IPT N-Channel MOSFET, 333 A, 80 V, 8-Pin HSOF-8 IPT013N08NM5LFATMA1
- RS Stock No.:
- 236-1586
- Mfr. Part No.:
- IPT013N08NM5LFATMA1
- Manufacturer:
- Infineon
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HK$82,062.00
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Units | Per unit | Per Reel* |
|---|---|---|
| 2000 - 8000 | HK$41.031 | HK$82,062.00 |
| 10000 + | HK$40.21 | HK$80,420.00 |
*price indicative
- RS Stock No.:
- 236-1586
- Mfr. Part No.:
- IPT013N08NM5LFATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 333A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | HSOF-8 | |
| Series | IPT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.3mΩ | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 278W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 158nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.1mm | |
| Width | 10.58mm | |
| Standards/Approvals | No | |
| Height | 2.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 333A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type HSOF-8 | ||
Series IPT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.3mΩ | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 278W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 158nC | ||
Maximum Operating Temperature 150°C | ||
Length 10.1mm | ||
Width 10.58mm | ||
Standards/Approvals No | ||
Height 2.4mm | ||
Automotive Standard No | ||
Infineon IPT Series MOSFET, 80V Maximum Drain Source Voltage, 333A Maximum Continuous Drain Current - IPT013N08NM5LFATMA1
This MOSFET is a high-current N-channel transistor designed for surface-mount power switching in demanding thermal environments. It operates across a wide ambient range and delivers substantial continuous drain current and voltage capability for industrial and power-conversion applications.
Features and Benefits:
• 333A continuous drain current for heavy load handling
• 80V drain-to-source rating for mid-voltage systems
• 1.3mΩ low Rds(on) to reduce conduction losses
• 278W maximum power dissipation for thermal headroom
• 158nC typical gate charge for predictable switching behaviour
• 80V drain-to-source rating for mid-voltage systems
• 1.3mΩ low Rds(on) to reduce conduction losses
• 278W maximum power dissipation for thermal headroom
• 158nC typical gate charge for predictable switching behaviour
Applications
• Suitable for high-current DC-DC converters
• Ideal for motor drives and traction inverters
• Used with power distribution modules in servers
• Can be used for high-power battery management systems
• Ideal for motor drives and traction inverters
• Used with power distribution modules in servers
• Can be used for high-power battery management systems
What gate voltage range is permissible for driving this device?
The gate can be driven up to 20V relative to source without exceeding the specified limit.
What package and mounting style does it use for assembly?
It is supplied in an HSOF-8 package configured for surface mounting on printed-circuit assemblies.
How does the device perform in low-temperature conditions?
It is rated to operate down to -55°C, allowing use in cold-climate installations.
What are the physical envelope measurements relevant for PCB footprint planning?
The component measures 10.1mm by 10.58mm with a height of 2.4mm.
Is this device specified to meet automotive-grade standards?
It is not classified as an automotive-grade component.
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