ROHM SiC N-Channel MOSFET, 14 A, 1200 V, 3-Pin TO-247N SCT2280KEHRC11

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Subtotal (1 tube of 450 units)*

HK$35,707.50

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Units
Per unit
Per Tube*
450 - 450HK$79.35HK$35,707.50
900 - 4050HK$77.763HK$34,993.35
4500 +HK$75.43HK$33,943.50

*price indicative

RS Stock No.:
235-2800
Mfr. Part No.:
SCT2280KEHRC11
Manufacturer:
ROHM
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Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

14 A

Maximum Drain Source Voltage

1200 V

Package Type

TO-247N

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.28 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Transistor Material

SiC

Number of Elements per Chip

1

The ROHM SCT series N-channel SiC power MOSFET suitable for solar inverters, DC/DC converters, induction heating and motor drives. It has low on state resistance and fast switching speed.

Fast reverse recovery

Easy to parallel

Simple to drive

Pb-free lead plating

RoHS compliant

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