ROHM Type N-Channel MOSFET, 39 A, 100 V Enhancement, 8-Pin HSMT RQ3P300BHTB1
- RS Stock No.:
- 235-2775
- Mfr. Part No.:
- RQ3P300BHTB1
- Manufacturer:
- ROHM
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 5 units)*
HK$112.40
FREE delivery for orders over HK$250.00
Temporarily out of stock
- Shipping from 11 November 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | HK$22.48 | HK$112.40 |
| 50 - 95 | HK$22.06 | HK$110.30 |
| 100 - 245 | HK$21.70 | HK$108.50 |
| 250 - 995 | HK$21.28 | HK$106.40 |
| 1000 + | HK$20.88 | HK$104.40 |
*price indicative
- RS Stock No.:
- 235-2775
- Mfr. Part No.:
- RQ3P300BHTB1
- Manufacturer:
- ROHM
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 39A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | HSMT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 15.5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.15mm | |
| Standards/Approvals | No | |
| Width | 0.85mm | |
| Height | 3.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 39A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type HSMT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 15.5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Maximum Operating Temperature 150°C | ||
Length 3.15mm | ||
Standards/Approvals No | ||
Width 0.85mm | ||
Height 3.4mm | ||
Automotive Standard No | ||
The ROHM N channel power MOSFET with low on state resistance has drain to source voltage of 100 V. It is Ideal for switching purpose.
Small surface mount package
Pb-free lead plating
RoHS compliant
Related links
- ROHM Type N-Channel MOSFET 100 V Enhancement, 8-Pin HSMT RQ3P300BHTB1
- ROHM RH6R025BH Type N-Channel MOSFET 150 V Enhancement, 8-Pin HSMT
- ROHM RQ3G100GN Type N-Channel MOSFET 40 V Enhancement, 8-Pin HSMT RQ3G100GNTB
- ROHM HT8KE6 2 Type N-Channel MOSFET Arrays 100 V Enhancement, 8-Pin HSMT-8 HT8KE6HTB1
- ROHM RH6 1 Type N-Channel MOSFET 60 V Enhancement, 8-Pin HSMT-8 RH6L040BGTB1
- ROHM RQ3 Type N-Channel MOSFET 8-Pin HSMT-8 RQ3L060BGTB1
- ROHM RQ3 Type N-Channel MOSFET 60 V Enhancement, 8-Pin HSMT-8 RQ3L070BGTB1
- ROHM RQ3 Type N-Channel MOSFET 100 V Enhancement, 8-Pin HSMT-8 RQ3P270BKFRATCB