onsemi SUPERFET III Type N-Channel MOSFET, 62 A, 650 V Enhancement, 4-Pin TO-247
- RS Stock No.:
- 230-9084
- Mfr. Part No.:
- NTH4LN040N65S3H
- Manufacturer:
- onsemi
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Bulk discount available
Subtotal (1 tube of 450 units)*
HK$32,031.00
FREE delivery for orders over HK$250.00
Temporarily out of stock
- Shipping from 15 June 2026
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Units | Per unit | Per Tube* |
|---|---|---|
| 450 - 450 | HK$71.18 | HK$32,031.00 |
| 900 - 4050 | HK$69.756 | HK$31,390.20 |
| 4500 + | HK$68.361 | HK$30,762.45 |
*price indicative
- RS Stock No.:
- 230-9084
- Mfr. Part No.:
- NTH4LN040N65S3H
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 62A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247 | |
| Series | SUPERFET III | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 40mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 132nC | |
| Maximum Power Dissipation Pd | 379W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 13.28mm | |
| Width | 2.4 mm | |
| Length | 10.2mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 62A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247 | ||
Series SUPERFET III | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 40mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 132nC | ||
Maximum Power Dissipation Pd 379W | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 13.28mm | ||
Width 2.4 mm | ||
Length 10.2mm | ||
Automotive Standard No | ||
The ON Semiconductor series SUPERFET III MOSFET is new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET FAST series helps minimize various power systems and improve system efficiency.
100% Avalanche Tested
RoHS Compliant
Typ. RDS(on) = 32 mΩ
Internal Gate Resistance: 0.7 Ω
Ultra Low Gate Charge (Typ. Qg = 132 nC)
700 V @ TJ = 150 oC
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