onsemi NTB7D Type N-Channel MOSFET, 101 A, 150 V Enhancement, 4-Pin TO-263
- RS Stock No.:
- 230-9080
- Mfr. Part No.:
- NTB7D3N15MC
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 reel of 800 units)*
HK$13,500.00
FREE delivery for orders over HK$250.00
Temporarily out of stock
- Shipping from 12 August 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 800 - 800 | HK$16.875 | HK$13,500.00 |
| 1600 - 7200 | HK$16.538 | HK$13,230.40 |
| 8000 + | HK$16.207 | HK$12,965.60 |
*price indicative
- RS Stock No.:
- 230-9080
- Mfr. Part No.:
- NTB7D3N15MC
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 101A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | TO-263 | |
| Series | NTB7D | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 73mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 53nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 166W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.83 mm | |
| Height | 15.88mm | |
| Length | 10.67mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 101A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type TO-263 | ||
Series NTB7D | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 73mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 53nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 166W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Width 4.83 mm | ||
Height 15.88mm | ||
Length 10.67mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The ON Semiconductor MOSFET - N-channel shielded gate power trench MOSFET which has drain to source voltage of 150 V.
Optimized Switching performance
Max RDS(on) = 7.3 mΩ at VGS = 10 V, ID = 62A
Industry’s Lowest Qrr and softest Body-Diode for superior low noise switching
50% Lower Qrr than other MOSFET Suppliers
High efficiency with lower switching spike and EMI
Lowers Switching Noise/EMI
Improved switching FOM particularly Qgd
100% UIL Tested
No need or less snubber
Related links
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