onsemi Isolated Type N-Channel SiC Power Module, 304 A, 1200 V, 36-Pin F2 NXH006P120MNF2PTG

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Subtotal (1 unit)*

HK$1,810.50

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Units
Per unit
1 - 9HK$1,810.50
10 - 19HK$1,774.30
20 - 29HK$1,738.80
30 - 39HK$1,704.00
40 +HK$1,652.90

*price indicative

Packaging Options:
RS Stock No.:
229-6510
Mfr. Part No.:
NXH006P120MNF2PTG
Manufacturer:
onsemi
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Brand

onsemi

Product Type

SiC Power Module

Channel Type

Type N

Maximum Continuous Drain Current Id

304A

Maximum Drain Source Voltage Vds

1200V

Package Type

F2

Mount Type

Chassis

Pin Count

36

Forward Voltage Vf

6V

Maximum Gate Source Voltage Vgs

25 V

Maximum Power Dissipation Pd

950W

Typical Gate Charge Qg @ Vgs

847nC

Minimum Operating Temperature

-40°C

Transistor Configuration

Isolated

Maximum Operating Temperature

175°C

Width

57 mm

Standards/Approvals

Halide Free, Pb-Free, RoHS

Height

17mm

Length

63.3mm

Automotive Standard

No

The ON Semiconductor power module containing an 1200 V SiC MOSFET half−bridge and a thermistor in an F2 package. It is typically used in solar inverter, UPS, electrical vehicle charging stations and industrial power.

Options with pre−applied thermal interface material

Options with solderable pins and press−fit pins

Pb−free

RoHS compliant

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