Infineon Dual IPG 2 Type N-Channel Power Transistor, 20 A, 40 V Enhancement, 8-Pin SuperSO IPG20N04S4L11AATMA1
- RS Stock No.:
- 229-1845
- Mfr. Part No.:
- IPG20N04S4L11AATMA1
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 pack of 15 units)*
HK$111.105
FREE delivery for orders over HK$250.00
In Stock
- 4,950 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 15 - 15 | HK$7.407 | HK$111.11 |
| 30 - 75 | HK$7.273 | HK$109.10 |
| 90 - 225 | HK$7.14 | HK$107.10 |
| 240 - 465 | HK$7.02 | HK$105.30 |
| 480 + | HK$6.893 | HK$103.40 |
*price indicative
- RS Stock No.:
- 229-1845
- Mfr. Part No.:
- IPG20N04S4L11AATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | Power Transistor | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | IPG | |
| Package Type | SuperSO | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 11.6mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Maximum Power Dissipation Pd | 41W | |
| Typical Gate Charge Qg @ Vgs | 20nC | |
| Forward Voltage Vf | 0.9V | |
| Minimum Operating Temperature | -55°C | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 175°C | |
| Height | 1mm | |
| Standards/Approvals | AEC-Q101 | |
| Length | 5.15mm | |
| Width | 5.9 mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type Power Transistor | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series IPG | ||
Package Type SuperSO | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 11.6mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Maximum Power Dissipation Pd 41W | ||
Typical Gate Charge Qg @ Vgs 20nC | ||
Forward Voltage Vf 0.9V | ||
Minimum Operating Temperature -55°C | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 175°C | ||
Height 1mm | ||
Standards/Approvals AEC-Q101 | ||
Length 5.15mm | ||
Width 5.9 mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
The Infineon dual n channel logic level MOSFET is feasible for automatic optical inspection. It has 175°C operating temperature and 100 percent avalanche tested.
It is RoHS compliant and AEC Q101 qualified
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