Infineon Dual N IPG 2 Type N-Channel Power Transistor, 20 A, 40 V Enhancement, 8-Pin SuperSO IPG20N04S412AATMA1

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HK$107.70

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Units
Per unit
Per Pack*
15 - 15HK$7.18HK$107.70
30 - 75HK$7.047HK$105.71
90 - 225HK$6.927HK$103.91
240 - 465HK$6.793HK$101.90
480 +HK$6.687HK$100.31

*price indicative

Packaging Options:
RS Stock No.:
229-1843
Mfr. Part No.:
IPG20N04S412AATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

Power Transistor

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

40V

Package Type

SuperSO

Series

IPG

Pin Count

8

Maximum Drain Source Resistance Rds

12.19mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

41W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

14nC

Maximum Operating Temperature

175°C

Transistor Configuration

Dual N

Standards/Approvals

AEC Q101, RoHS

Number of Elements per Chip

2

Automotive Standard

AEC-Q101

The Infineon dual n channel normal level MOSFET has same thermal and electrical performance as a DPAK with the same die size. It's exposed pad provides excellent thermal transfer. It is two n channel in one package with 2 isolated lead frames.

It is RoHS compliant and AEC Q101 qualified

It has 175°C operating temperature

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