Infineon IPD Type N-Channel MOSFET, 90 A, 40 V Enhancement, 3-Pin TO-252 IPD90N04S4L04ATMA1
- RS Stock No.:
- 229-1837
- Mfr. Part No.:
- IPD90N04S4L04ATMA1
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 pack of 15 units)*
HK$58.395
FREE delivery for orders over HK$250.00
In Stock
- 14,400 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 15 - 15 | HK$3.893 | HK$58.40 |
| 30 - 75 | HK$3.793 | HK$56.90 |
| 90 - 225 | HK$3.70 | HK$55.50 |
| 240 - 465 | HK$3.607 | HK$54.11 |
| 480 + | HK$3.52 | HK$52.80 |
*price indicative
- RS Stock No.:
- 229-1837
- Mfr. Part No.:
- IPD90N04S4L04ATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 90A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-252 | |
| Series | IPD | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 71W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 46nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Width | 6.22 mm | |
| Standards/Approvals | No | |
| Length | 6.5mm | |
| Height | 2.3mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 90A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-252 | ||
Series IPD | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.8mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 71W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 46nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Width 6.22 mm | ||
Standards/Approvals No | ||
Length 6.5mm | ||
Height 2.3mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon n channel normal level power MOSFET used for automotive applications. It has lowest switching and conduction power losses for highest thermal efficiency. It is robust packages with superior quality and reliability.
It is RoHS compliant and AEC qualified
It has 175°C operating temperature
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