Infineon iPB Type P-Channel MOSFET, 180 A, 40 V Enhancement, 7-Pin TO-263 IPB180P04P4L02ATMA2
- RS Stock No.:
- 229-1821
- Mfr. Part No.:
- IPB180P04P4L02ATMA2
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Get a bulk buy discount
Add 10 more to save HK$6.20
View bulk pricing optionsSubtotal (1 pack of 5 units)*
HK$172.60
FREE delivery for orders over HK$250.00
In Stock
- 810 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* | Saving |
|---|---|---|---|
| 5 - 5 | HK$34.52 | HK$172.60 | - |
| 10 - 95 | HK$33.90 | HK$169.50 | HK$6.20 |
| 100 - 245 | HK$33.30 | HK$166.50 | HK$122.00 |
| 250 - 495 | HK$32.68 | HK$163.40 | HK$460.00 |
| 500 + | HK$32.08 | HK$160.40 | HK$1,220.00 |
*price indicative
- RS Stock No.:
- 229-1821
- Mfr. Part No.:
- IPB180P04P4L02ATMA2
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 180A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | iPB | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 2.4mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 16V | |
| Maximum Power Dissipation Pd | 150W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.3V | |
| Maximum Operating Temperature | +175°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 180A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series iPB | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 2.4mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 16V | ||
Maximum Power Dissipation Pd 150W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.3V | ||
Maximum Operating Temperature +175°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Infineon iPB Series MOSFET, 150W Maximum Power Dissipation, 40V Maximum Drain Source Voltage - IPB180P04P4L02ATMA2
This MOSFET is a P-channel enhancement-mode power transistor designed for high-current switching in surface-mounted assemblies. It operates across a wide ambient temperature range and meets automotive stress qualifications for use in demanding electrical systems. The component is packaged for thermal and assembly efficiency and tolerates gate drive voltages suitable for power-control topologies.
Features and Benefits:
• Low on-resistance 2.4mΩ reduces conduction losses
• High continuous current 180A enables heavy-load switching
• 40V drain-source rating suits moderate-voltage systems
• 150W power dissipation supports sustained power handling
• Gate tolerance 16V allows robust control-voltage margins
• Temperature rating −55°C to +175°C sustains extreme environments
• High continuous current 180A enables heavy-load switching
• 40V drain-source rating suits moderate-voltage systems
• 150W power dissipation supports sustained power handling
• Gate tolerance 16V allows robust control-voltage margins
• Temperature rating −55°C to +175°C sustains extreme environments
Applications
• Suitable for automotive power distribution units
• Ideal for high-current DC-DC converter stages
• Used for motor driver high-side switching
• Can be used for battery management protection circuits
• Suitable for surface-mount power modules in vehicles
• Ideal for high-current DC-DC converter stages
• Used for motor driver high-side switching
• Can be used for battery management protection circuits
• Suitable for surface-mount power modules in vehicles
What mounting style does it require for PCB assembly?
It is supplied in a TO-263 package intended for surface mounting.
How does it perform under continuous high current?
It supports continuous drain currents up to 180A with a maximum power dissipation of 150W.
What gate voltage range should be observed during operation?
Gate-source voltage should not exceed 16V to prevent device stress.
Is it suitable for use across wide temperature extremes?
The device is rated for operation from −55°C up to +175°C for high-temperature applications.
What type of channel and conduction mode does it use?
It employs a P-type channel operating in enhancement mode.
Related links
- Infineon iPB Type P-Channel MOSFET 40 V Enhancement, 7-Pin TO-263
- Infineon iPB Type P-Channel MOSFET 40 V Enhancement TO-263
- Infineon iPB Type P-Channel MOSFET 40 V Enhancement TO-263 IPB180P04P403ATMA2
- Infineon iPB Type P-Channel MOSFET 40 V Enhancement TO-263
- Infineon iPB Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-263
- Infineon iPB Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-263
- Infineon iPB Type P-Channel MOSFET 800 V Enhancement TO-263
- Infineon iPB Type P-Channel MOSFET 40 V Enhancement TO-263