Infineon iPB Type P-Channel MOSFET, 120 A, 40 V Enhancement, 3-Pin TO-263 IPB120P04P4L03ATMA2
- RS Stock No.:
- 229-1819
- Mfr. Part No.:
- IPB120P04P4L03ATMA2
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
HK$153.10
FREE delivery for orders over HK$250.00
In Stock
- 605 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | HK$30.62 | HK$153.10 |
| 10 - 95 | HK$30.06 | HK$150.30 |
| 100 - 245 | HK$29.52 | HK$147.60 |
| 250 - 495 | HK$29.00 | HK$145.00 |
| 500 + | HK$28.48 | HK$142.40 |
*price indicative
- RS Stock No.:
- 229-1819
- Mfr. Part No.:
- IPB120P04P4L03ATMA2
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-263 | |
| Series | iPB | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.1mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 136W | |
| Maximum Gate Source Voltage Vgs | 16V | |
| Forward Voltage Vf | -1.3V | |
| Maximum Operating Temperature | +175°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-263 | ||
Series iPB | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.1mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 136W | ||
Maximum Gate Source Voltage Vgs 16V | ||
Forward Voltage Vf -1.3V | ||
Maximum Operating Temperature +175°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Infineon iPB Series MOSFET, 40V Maximum Drain Source Voltage, 120A Maximum Continuous Drain Current - IPB120P04P4L03ATMA2
This p-channel MOSFET is a surface-mount power transistor designed for high-current switching and thermal resilience in automotive and industrial environments. It operates across a wide temperature span and is intended for use where robust gate tolerance and low conduction loss are required.
Features and Benefits:
• 40V drain-source rating enables medium-voltage switching
• 120A continuous drain current supports heavy load handling
• 3.1mΩ low Rds(on) reduces conduction losses under load
• 136W power dissipation allows sustained power handling
• Vgs tolerance up to 16V permits higher gate drive margins
• -55°C to 175°C temperature range maintains operation in extremes
• 120A continuous drain current supports heavy load handling
• 3.1mΩ low Rds(on) reduces conduction losses under load
• 136W power dissipation allows sustained power handling
• Vgs tolerance up to 16V permits higher gate drive margins
• -55°C to 175°C temperature range maintains operation in extremes
Applications
• Suitable for high-current reverse battery protection circuits
• Ideal for automotive power distribution modules
• Used with motor controller low-side or high-side
• Can be used for DC-DC converter synchronous switching
• Suitable for power-management functions in electric vehicles
• Ideal for automotive power distribution modules
• Used with motor controller low-side or high-side
• Can be used for DC-DC converter synchronous switching
• Suitable for power-management functions in electric vehicles
What package does it use for PCB assembly?
It is supplied in a TO-263 surface-mount package designed for soldered board mounting.
How does it behave thermally under high load?
The device can dissipate up to 136W when properly cooled, allowing extended operation at elevated power with adequate thermal management.
What gate limits should be observed during design?
The gate-source voltage must not exceed 16V to avoid gate overstress.
Is it suitable for automotive qualification requirements?
It meets the AEC-Q101 automotive standard for semiconductor qualification.
Related links
- Infineon iPB Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-263
- Infineon iPB Type P-Channel MOSFET 40 V Enhancement TO-263
- Infineon iPB Type P-Channel MOSFET 40 V Enhancement TO-263 IPB120P04P404ATMA2
- Infineon iPB Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-263
- Infineon iPB Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-263 IPB80P03P4L04ATMA2
- Infineon iPB Type P-Channel MOSFET 40 V Enhancement, 7-Pin TO-263
- Infineon iPB Type P-Channel MOSFET 40 V Enhancement TO-263
- Infineon iPB Type P-Channel MOSFET 800 V Enhancement TO-263