Infineon AUIRF Type P-Channel MOSFET, 13 A, 150 V Enhancement, 3-Pin TO-263 AUIRF6215STRL
- RS Stock No.:
- 229-1734
- Mfr. Part No.:
- AUIRF6215STRL
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 5 units)*
HK$157.30
FREE delivery for orders over HK$250.00
Temporarily out of stock
- Shipping from 29 January 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | HK$31.46 | HK$157.30 |
| 10 - 95 | HK$30.90 | HK$154.50 |
| 100 - 245 | HK$30.34 | HK$151.70 |
| 250 - 495 | HK$29.80 | HK$149.00 |
| 500 + | HK$29.26 | HK$146.30 |
*price indicative
- RS Stock No.:
- 229-1734
- Mfr. Part No.:
- AUIRF6215STRL
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | AUIRF | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 290mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 66nC | |
| Forward Voltage Vf | -1.6V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 110W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.67mm | |
| Width | 9.65 mm | |
| Height | 4.83mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series AUIRF | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 290mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 66nC | ||
Forward Voltage Vf -1.6V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 110W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 10.67mm | ||
Width 9.65 mm | ||
Height 4.83mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Infineon single p channel HEXFET power MOSFET in D2-Pak package. It has fast switching and fully avalanche rated. It is lead free and has low on resistance.
It is RoHS compliant and AEC qualified
It has 175°C operating temperature
Related links
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