Infineon IAUS300N10S5N015T N-Channel MOSFET, 350 A, 100 V Enhancement, 16-Pin HDSOP IAUS300N10S5N015TATMA1
- RS Stock No.:
- 228-6531
- Mfr. Part No.:
- IAUS300N10S5N015TATMA1
- Manufacturer:
- Infineon
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Units | Per unit | Per Pack* |
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| 2 - 8 | HK$56.30 | HK$112.60 |
| 10 - 98 | HK$54.90 | HK$109.80 |
| 100 - 248 | HK$53.60 | HK$107.20 |
| 250 - 498 | HK$52.20 | HK$104.40 |
| 500 + | HK$50.90 | HK$101.80 |
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- RS Stock No.:
- 228-6531
- Mfr. Part No.:
- IAUS300N10S5N015TATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 350A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | HDSOP | |
| Series | IAUS300N10S5N015T | |
| Mount Type | Surface | |
| Pin Count | 16 | |
| Maximum Drain Source Resistance Rds | 1.5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 375W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | +175°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 350A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type HDSOP | ||
Series IAUS300N10S5N015T | ||
Mount Type Surface | ||
Pin Count 16 | ||
Maximum Drain Source Resistance Rds 1.5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 375W | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature +175°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Infineon IAUS300N10S5N015T Series MOSFET, 100V Drain Source Voltage, 350A Continuous Drain Current - IAUS300N10S5N015TATMA1
This MOSFET is a high-current switching transistor designed for demanding automotive and power applications, providing controlled conduction in N‑channel enhancement mode across a wide temperature span. It is supplied in a 16‑pin surface-mount HDSOP package suitable for Compact circuit assemblies and conforms to automotive stress criteria for use in vehicle electronics.
Features and Benefits:
• 100 V drain rating enabling high-voltage switching capability
• 350 A continuous drain current supports heavy current loads
• 1.5 mΩ low Rds(on) reduces conduction losses
• 375 W power dissipation allows sustained thermal loading
• ±20 V gate tolerance permits robust drive-voltage margins
• −55 °C to +175 °C operating range for extreme environments
• 350 A continuous drain current supports heavy current loads
• 1.5 mΩ low Rds(on) reduces conduction losses
• 375 W power dissipation allows sustained thermal loading
• ±20 V gate tolerance permits robust drive-voltage margins
• −55 °C to +175 °C operating range for extreme environments
Applications
• Suitable for automotive traction inverter stages
• Ideal for high-current motor control modules
• Used with battery management and power distribution
• Can be used for DC-DC converters in vehicles
• Suitable for electric powertrain auxiliary circuits
• Ideal for high-current motor control modules
• Used with battery management and power distribution
• Can be used for DC-DC converters in vehicles
• Suitable for electric powertrain auxiliary circuits
What package considerations affect PCB layout?
The HDSOP surface-mount package requires thermal copper pours and multiple PCB vias to manage heat from high power dissipation.
How does the device handle transient gate excursions?
The gate tolerance of ±20 V defines the maximum allowable gate‑to‑source voltage for protection against transient overstress.
What thermal environment is supported during continuous operation?
Continuous operation is specified across a temperature span from −55 °C to +175 °C to accommodate both cold starts and elevated under-hood temperatures.
How does the forward voltage impact diode conduction losses?
A forward voltage of 1.3 V for the intrinsic diode determines the conduction drop when the body diode conducts during reverse-current events.
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