Vishay E Type N-Channel MOSFET, 34 A, 700 V Enhancement, 3-Pin TO-247 SQW33N65EF-GE3

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Subtotal (1 pack of 2 units)*

HK$72.00

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Units
Per unit
Per Pack*
2 - 8HK$36.00HK$72.00
10 - 24HK$34.90HK$69.80
26 - 98HK$33.90HK$67.80
100 - 498HK$32.85HK$65.70
500 +HK$31.85HK$63.70

*price indicative

Packaging Options:
RS Stock No.:
228-2975
Mfr. Part No.:
SQW33N65EF-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

34A

Maximum Drain Source Voltage Vds

700V

Series

E

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

109mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Forward Voltage Vf

0.9V

Maximum Power Dissipation Pd

375W

Typical Gate Charge Qg @ Vgs

115nC

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Vishay E Series Power MOSFET reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

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