Vishay N-Channel 40 V Type N-Channel MOSFET, 372 A, 40 V, 8-Pin PowerPAK (8x8LR) SQJQ148ER-T1_GE3
- RS Stock No.:
- 225-9965
- Mfr. Part No.:
- SQJQ148ER-T1_GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 5 units)*
HK$108.40
FREE delivery for orders over HK$250.00
Supply shortage
Due to limitations in the supply chain, stock is being assigned as it becomes available.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | HK$21.68 | HK$108.40 |
| 50 - 95 | HK$21.30 | HK$106.50 |
| 100 - 245 | HK$20.90 | HK$104.50 |
| 250 - 995 | HK$20.52 | HK$102.60 |
| 1000 + | HK$20.16 | HK$100.80 |
*price indicative
- RS Stock No.:
- 225-9965
- Mfr. Part No.:
- SQJQ148ER-T1_GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 372A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | N-Channel 40 V | |
| Package Type | PowerPAK (8x8LR) | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.1mΩ | |
| Typical Gate Charge Qg @ Vgs | 68nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 394W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.8V | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.6mm | |
| Standards/Approvals | AEC-Q101 | |
| Width | 8 mm | |
| Length | 8.3mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 372A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series N-Channel 40 V | ||
Package Type PowerPAK (8x8LR) | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.1mΩ | ||
Typical Gate Charge Qg @ Vgs 68nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 394W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.8V | ||
Maximum Operating Temperature 175°C | ||
Height 1.6mm | ||
Standards/Approvals AEC-Q101 | ||
Width 8 mm | ||
Length 8.3mm | ||
Automotive Standard AEC-Q101 | ||
The Vishay Siliconix maintains Reliability data for Semiconductor Technology and Package Reliability represent a composite of all qualified locations.
AEC-Q101 qualified
100 % Rg and UIS tested
Thin 1.6 mm package
Very low thermal resistance
Related links
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