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Vishay N-Channel 150 V Type N-Channel MOSFET, 59.7 A, 150 V, 8-Pin SO-8 SIR572DP-T1-RE3

RS Stock No.:: 225-9928
Mfr. Part No.:: SIR572DP-T1-RE3
Manufacturer:: Vishay

Vishay N-Channel 150 V Type N-Channel MOSFET, 59.7 A, 150 V, 8-Pin SO-8 SIR572DP-T1-RE3

The image is for reference only, please refer to product details and specifications

Bulk discount available

Subtotal (1 pack of 5 units)*

HK$91.60

FREE delivery for orders over HK$250.00

Being discontinued

Final 930 unit(s), ready to ship from another location

Units	Per unit	Per Pack*
5 - 45	HK$18.32	HK$91.60
50 - 95	HK$17.78	HK$88.90
100 - 245	HK$17.22	HK$86.10
250 - 995	HK$16.72	HK$83.60
1000 +	HK$16.20	HK$81.00

*price indicative

RS Stock No.:: 225-9928
Mfr. Part No.:: SIR572DP-T1-RE3
Manufacturer:: Vishay

Specifications

Product overview and Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	59.7A
	Maximum Drain Source Voltage Vds	150V
	Series	N-Channel 150 V
	Package Type	SO-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	11.5mΩ
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	54nC
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	92.5W
	Forward Voltage Vf	1.1V
	Maximum Operating Temperature	150°C
	Height	5.26mm
	Length	6.25mm
	Standards/Approvals	No
	Width	1.12 mm
	Automotive Standard	No

	Select all
	Brand Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 59.7A
	Maximum Drain Source Voltage Vds 150V
	Series N-Channel 150 V
	Package Type SO-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 11.5mΩ
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 54nC
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 92.5W
	Forward Voltage Vf 1.1V
	Maximum Operating Temperature 150°C
	Height 5.26mm
	Length 6.25mm
	Standards/Approvals No
	Width 1.12 mm
	Automotive Standard No

Datasheet - SIR572DP-T1-RE3

The Vishay Siliconix maintains Reliability data for Semiconductor Technology and Package Reliability represent a composite of all qualified locations.

TrenchFET Gen IV power MOSFET

Very low RDS x Qg figure-of-merit (FOM)

Tuned for the lowest RDS x Qoss FOM

100 % Rg and UIS tested

Vishay N-Channel 150 V Type N-Channel MOSFET, 59.7 A, 150 V, 8-Pin SO-8 SIR572DP-T1-RE3

FREE delivery for orders over HK$250.00

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