Infineon BSP135I N-Channel MOSFET, 120 mA, 600 V Depletion, 4-Pin SOT-223 BSP135IXTSA1
- RS Stock No.:
- 225-0555
- Mfr. Part No.:
- BSP135IXTSA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Subtotal (1 pack of 10 units)*
HK$39.70
FREE delivery for orders over HK$250.00
- 150 unit(s) ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | HK$3.97 | HK$39.70 |
| 20 - 90 | HK$3.85 | HK$38.50 |
| 100 - 240 | HK$3.74 | HK$37.40 |
| 250 - 490 | HK$3.63 | HK$36.30 |
| 500 + | HK$3.52 | HK$35.20 |
*price indicative
- RS Stock No.:
- 225-0555
- Mfr. Part No.:
- BSP135IXTSA1
- Manufacturer:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 120mA | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | SOT-223 | |
| Series | BSP135I | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 60Ω | |
| Channel Mode | Depletion | |
| Typical Gate Charge Qg @ Vgs | 3.7nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.8W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.8mm | |
| Width | 3.7mm | |
| Standards/Approvals | No | |
| Length | 6.7mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 120mA | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type SOT-223 | ||
Series BSP135I | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 60Ω | ||
Channel Mode Depletion | ||
Typical Gate Charge Qg @ Vgs 3.7nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.8W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Height 1.8mm | ||
Width 3.7mm | ||
Standards/Approvals No | ||
Length 6.7mm | ||
Automotive Standard AEC-Q101 | ||
Infineon BSP135I Series MOSFET, 600V Maximum Drain Source Voltage, 120mA Maximum Continuous Drain Current - BSP135IXTSA1
Features and Benefits:
• 60Ω maximum RDS(on) provides low on-state conduction loss
• 1.8W maximum power dissipation supports modest thermal loads
• 120mA continuous drain current for steady low-current applications
• 3.7nC typical gate charge for predictable switching performance
• 20V maximum gate-source withstand for robust gate handling
Applications
• Ideal for automotive electronics requiring component ruggedness
• Used with surface-mount assemblies on Compact boards
• Can be used for current-limiting or sensing in control circuits
• Suitable for thermal-stressed environments from −55°C to 150°C
What package type does it use for PCB assembly?
What electrical polarity and conduction mode does it employ?
What pin count is available for board layout considerations?
What physical profile should be allowed for enclosure design?
What automotive suitability standard is met for vehicle use?
Related links
- Infineon BSP135I Type N-Channel MOSFET 600 V Depletion, 4-Pin SOT-223
- Infineon SIPMOS Type N-Channel MOSFET 600 V Depletion, 4-Pin SOT-223 BSP135H6327XTSA1
- Infineon SIPMOS Type N-Channel MOSFET 600 V Depletion, 4-Pin SOT-223
- Infineon SIPMOS Type N-Channel MOSFET 600 V Enhancement, 4-Pin SOT-223 BSP125H6327XTSA1
- Infineon SIPMOS Type N-Channel MOSFET 600 V Enhancement, 4-Pin SOT-223
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- Microchip DN2540 Type N-Channel MOSFET 400 V Depletion, 3-Pin TO-92 DN2540N3-G
- Microchip DN2535 Type N-Channel MOSFET 350 V Depletion, 3-Pin TO-92
