Infineon Dual OptiMOS 2 Type N-Channel MOSFET Arrays, 20 A, 60 V Enhancement, 8-Pin TDSON IPG20N06S4L26AATMA1
- RS Stock No.:
- 223-8523
- Mfr. Part No.:
- IPG20N06S4L26AATMA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 15 units)*
HK$112.605
FREE delivery for orders over HK$250.00
In Stock
- 24,825 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 15 - 15 | HK$7.507 | HK$112.61 |
| 30 - 75 | HK$7.327 | HK$109.91 |
| 90 - 225 | HK$7.133 | HK$107.00 |
| 240 - 465 | HK$6.96 | HK$104.40 |
| 480 + | HK$6.78 | HK$101.70 |
*price indicative
- RS Stock No.:
- 223-8523
- Mfr. Part No.:
- IPG20N06S4L26AATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET Arrays | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TDSON | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 26mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 33W | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Dual | |
| Standards/Approvals | RoHS | |
| Length | 5.15mm | |
| Height | 1mm | |
| Width | 5.9 mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET Arrays | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TDSON | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 26mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 33W | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Dual | ||
Standards/Approvals RoHS | ||
Length 5.15mm | ||
Height 1mm | ||
Width 5.9 mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS series dual N-channel MOSFET has drain to source voltage of 60 V. It has benefits of larger source lead frame connection for wire bonding and bond wire is 200um for up to 20A current.
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package
Ultra low Rds
100% Avalanche tested
Related links
- Infineon Dual OptiMOS 2 Type N-Channel MOSFET Arrays 60 V Enhancement, 8-Pin TDSON
- Infineon Dual OptiMOS 2 Type N-Channel MOSFET & Diode 100 V Enhancement, 8-Pin TDSON
- Infineon Dual OptiMOS 2 Type N-Channel MOSFET & Diode 100 V Enhancement, 8-Pin TDSON IPG20N10S4L35AATMA1
- Infineon Dual OptiMOS 2 Type N-Channel Power Transistor 55 V Enhancement, 8-Pin TDSON
- Infineon Dual OptiMOS 2 Type N-Channel Power Transistor 100 V Enhancement, 8-Pin TDSON
- Infineon Dual OptiMOS 2 Type N-Channel Power Transistor 40 V Enhancement, 8-Pin TDSON
- Infineon Dual OptiMOS 2 Type N-Channel Power Transistor 55 V Enhancement, 8-Pin TDSON IPG20N06S2L65AATMA1
- Infineon Dual OptiMOS 2 Type N-Channel Power Transistor 100 V Enhancement, 8-Pin TDSON IPG20N10S4L35ATMA1