Infineon Dual OptiMOS 2 Type N-Channel Power Transistor, 20 A, 55 V Enhancement, 8-Pin TDSON IPG20N06S2L65AATMA1
- RS Stock No.:
- 223-8520
- Mfr. Part No.:
- IPG20N06S2L65AATMA1
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 pack of 15 units)*
HK$87.495
FREE delivery for orders over HK$250.00
In Stock
- 19,950 unit(s) ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 15 - 15 | HK$5.833 | HK$87.50 |
| 30 - 75 | HK$5.733 | HK$86.00 |
| 90 - 225 | HK$5.627 | HK$84.41 |
| 240 - 465 | HK$5.527 | HK$82.91 |
| 480 + | HK$5.42 | HK$81.30 |
*price indicative
- RS Stock No.:
- 223-8520
- Mfr. Part No.:
- IPG20N06S2L65AATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | Power Transistor | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | TDSON | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 65mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 9.4nC | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 43W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 175°C | |
| Height | 1mm | |
| Width | 5.9 mm | |
| Length | 5.15mm | |
| Standards/Approvals | RoHS | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type Power Transistor | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type TDSON | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 65mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 9.4nC | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 43W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 175°C | ||
Height 1mm | ||
Width 5.9 mm | ||
Length 5.15mm | ||
Standards/Approvals RoHS | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS series dual N-channel MOSFET has drain to source voltage of 55 V. It has benefits of larger source lead frame connection for wire bonding and bond wire is 200um for up to 20A current.
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package
Ultra low Rds
100% Avalanche tested
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